Merge Peter's Phase 1 Contact List into Prospect Scout, expand to 6 divisions
Restructured from 5 to 6 divisions to preserve Peter's own granularity (his Power Electronics (Devices) and WBG Device Manufacturer categories stay separate rather than merged) and to give this sweep's two new finds their own visible divisions: Semiconductor Materials & Substrates (wafer/crystal-growth makers, absent from Peter's device-only list) and Research & Collaborations (academic/national-lab partners). Prospect Scout now holds 44 deduplicated entries (25 from Peter's list + 24 from the sweep, 5 overlaps resolved) with a per-card source badge (Peter's list / this sweep / both) and per-division counts.
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<div style="font-size:14px;color:var(--txt);line-height:1.65;"><strong style="color:var(--navy);">Horizontal selling</strong> is the opposite: one generic message pushed to all industries at once. It is faster to produce but less persuasive, because no single sector sees itself reflected in it. A company selling "cloud storage" to everyone is horizontal. A company selling "clinical trial data compliance for pharma" is vertical.</div>
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</div>
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</div>
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<div class="disclaimer">Target divisions updated 2026-08-22: pharma deprioritized, focus narrowed to 4 power-electronics-adjacent divisions plus research/collaborations.</div>
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<div class="disclaimer">Target divisions updated 2026-08-22: pharma deprioritized. Restructured 2026-08-22 to 6 divisions after merging Peter's Phase 1 Contact List with the Prospect Scout sweep — his two device-side categories kept separate, plus 2 new divisions this sweep surfaced that his list didn't have.</div>
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<div class="three-col mt16">
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<div class="panel">
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<div class="panel-title">Semiconductor (GaN & SiC)</div>
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<div class="panel-title">Semiconductor Materials & Substrates (GaN/SiC)</div>
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<div class="pain-list">
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<div class="pain-item" style="border-left-color:var(--blue)"><div class="pain-head">Crystal growth & epitaxy QC</div><div class="pain-body">Wide-bandgap material manufacturers need defect density, strain, and dislocation characterization during boule growth and epitaxial layer deposition — standard lab X-ray can't resolve this at the resolution needed.</div></div>
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<div class="pain-item" style="border-left-color:var(--blue)"><div class="pain-head">STMicroelectronics precedent</div><div class="pain-body">STMicroelectronics already has named researchers publishing ESRF beamtime work on phase-change memory and 3D IC characterisation — an existing proof point for this vertical.</div></div>
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<div class="pain-item" style="border-left-color:var(--blue)"><div class="pain-head">New division, not on Peter's list</div><div class="pain-body">Wafer/crystal-growth/epitaxy specialists (SweGaN, SK Siltron CSS, TanKeBlue, SICC) — none of these appeared in Peter's Phase 1 Contact List, which only covers device manufacturers. Genuinely new prospecting angle.</div></div>
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<div class="pain-item" style="border-left-color:var(--blue)"><div class="pain-head">Crystal growth & epitaxy QC</div><div class="pain-body">Material manufacturers need defect density, strain, and dislocation characterization during boule growth and epitaxial deposition — standard lab X-ray can't resolve this at the resolution needed.</div></div>
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</div>
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<div class="note mt16">Best-fit pitch: wafer/epi defect characterization beyond lab X-ray resolution.</div>
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<div class="note mt16">Best-fit pitch: wafer/epi defect characterization beyond lab X-ray resolution. Wolfspeed also operates a major SiC wafer fab (Mohawk Valley) but is listed under Power Electronics (Devices) to match Peter's placement.</div>
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</div>
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<div class="panel">
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<div class="panel-title">Power Electronics (Devices)</div>
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<div class="pain-list">
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<div class="pain-item" style="border-left-color:var(--navy)"><div class="pain-head">Peter's established-player tier</div><div class="pain-body">Peter's Phase 1 list's broader, established-name device category: Infineon, Wolfspeed, onsemi, STMicroelectronics, ROHM, Renesas, Power Integrations, Navitas, EPC, Innoscience, GaN Systems, Vishay.</div></div>
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<div class="pain-item" style="border-left-color:var(--navy)"><div class="pain-head">STMicroelectronics precedent</div><div class="pain-body">STMicroelectronics already has named researchers publishing ESRF beamtime work on phase-change memory and 3D IC characterisation — an existing proof point for this division.</div></div>
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</div>
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<div class="note mt16">Best-fit pitch: device-level reliability and in-situ characterization at scale.</div>
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</div>
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<div class="panel">
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<div class="panel-title">WBG Device Manufacturer</div>
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<div class="pain-list">
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<div class="pain-item" style="border-left-color:var(--green)"><div class="pain-head">Device-level reliability</div><div class="pain-body">GaN/SiC power transistor and module makers need in-situ, operando imaging of devices under real electrical/thermal load — packaging voids, delamination, thermal cycling failure modes.</div></div>
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<div class="pain-item" style="border-left-color:var(--green)"><div class="pain-head">Yole Group tracked market</div><div class="pain-body">Power electronics market data (Yole Group, quarterly) gives a structured way to identify active WBG device manufacturers worth prospecting.</div></div>
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<div class="pain-item" style="border-left-color:var(--green)"><div class="pain-head">Peter's niche/specialized tier</div><div class="pain-body">Peter's Phase 1 list keeps this separate from the broader Power Electronics category: Cissoid, WeEn Semiconductors, Solitron Devices, NexGen Power Systems, GaNPower International, Toshiba Electronic Devices — plus X-FAB and Transphorm from this sweep.</div></div>
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<div class="pain-item" style="border-left-color:var(--green)"><div class="pain-head">Yole Group tracked market</div><div class="pain-body">Power electronics market data (Yole Group, quarterly, see Sources) gives a structured way to identify active WBG device manufacturers worth prospecting in future sweeps.</div></div>
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</div>
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<div class="note mt16">Best-fit pitch: operando characterization under real operating conditions.</div>
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</div>
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</div>
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<div class="three-col mt16">
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<div class="panel">
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<div class="panel-title">Device Testing</div>
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<div class="pain-list">
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<div class="pain-item" style="border-left-color:var(--amber)"><div class="pain-head">Non-destructive qualification</div><div class="pain-body">Independent test/reliability labs qualifying power devices need non-destructive inspection (voids, wire-bond integrity, delamination) that beamtime can provide faster and at higher resolution than lab CT.</div></div>
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<div class="pain-item" style="border-left-color:var(--amber)"><div class="pain-head">No single tracker</div><div class="pain-body">Unlike Power Electronics (Yole) or WBG (Metoree), this segment has no single clean industry tracker — prospecting here relies on direct sweep rather than a periodic published source.</div></div>
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<div class="pain-item" style="border-left-color:var(--amber)"><div class="pain-head">Combined from both sources</div><div class="pain-body">Peter's Phase 1 list (ATS, AAA Engineering, RTS, BEAMIDE) plus this sweep's finds (Reltech, Integra Technologies, SGS, PCsemic) — no single periodic industry tracker for this segment, unlike Power Electronics (Yole).</div></div>
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</div>
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<div class="note mt16">Best-fit pitch: faster, higher-resolution qualification than lab CT.</div>
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</div>
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</div>
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<div class="two-col mt16">
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<div class="panel">
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<div class="panel-title">Radiation Hardness</div>
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<div class="pain-list">
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<div class="pain-item" style="border-left-color:var(--red)"><div class="pain-head">Rad-hard qualification</div><div class="pain-body">Space/defense electronics makers and rad-hard qualification labs need irradiation-effects characterization on ICs and power devices to meet qualification standards (e.g. ESCC/ESA-aligned testing).</div></div>
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<div class="pain-item" style="border-left-color:var(--red)"><div class="pain-head">escies.org tracked</div><div class="pain-body">The European Space Components Information Exchange System (escies.org) is the closest thing to a periodic source for this segment's active qualification labs and standards activity.</div></div>
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<div class="pain-item" style="border-left-color:var(--red)"><div class="pain-head">Combined from both sources</div><div class="pain-body">Peter's Phase 1 list (RADNEXT, ESA ESTEC/TEC-QEC, PSI) plus this sweep's finds (BAE Systems Space Systems, Teledyne e2v, VORAGO, UCLouvain Heavy Ion Facility).</div></div>
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</div>
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<div class="note mt16">Best-fit pitch: irradiation-effects characterization for qualification testing.</div>
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</div>
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<div class="panel">
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<div class="panel-title">Research & Collaborations</div>
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<div class="pain-list">
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<div class="pain-item" style="border-left-color:var(--navy)"><div class="pain-head">Joint-beamtime partners</div><div class="pain-body">Academic and national-lab groups already publishing GaN/SiC or power-device X-ray characterization work are potential co-authorship/joint-beamtime-application partners, not just prospects.</div></div>
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<div class="pain-item" style="border-left-color:var(--navy)"><div class="pain-head">NOBUGS / DESY proximity</div><div class="pain-body">DESY/European XFEL-hosted events like NOBUGS put TXproducts on its home campus alongside exactly this kind of research collaborator.</div></div>
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<div class="pain-item" style="border-left-color:var(--yellow)"><div class="pain-head">New division, not on Peter's list</div><div class="pain-body">Academic and national-lab groups already publishing GaN/SiC or power-device X-ray characterization work are potential co-authorship/joint-beamtime-application partners, not just prospects — a second angle this sweep surfaced that wasn't in Peter's device-focused list.</div></div>
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<div class="pain-item" style="border-left-color:var(--yellow)"><div class="pain-head">NOBUGS / DESY proximity</div><div class="pain-body">DESY/European XFEL-hosted events like NOBUGS put TXproducts on its home campus alongside exactly this kind of research collaborator.</div></div>
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</div>
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<div class="note mt16">Best-fit pitch: joint proposals and shared beamtime access, not a direct sale.</div>
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</div>
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@@ -1086,60 +1094,101 @@ function show(id, btn) {
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Snapshot of the periodic research sweep's report, hand-reviewed and pasted in here.
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Each entry: { division, name, location, url, reason }. */
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var PROSPECT_RESULTS = [
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{ division: "Semiconductor (GaN & SiC)", name: "SweGaN AB", location: "Linköping, Sweden", url: "https://swegan.se",
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{ division: "Semiconductor Materials & Substrates (GaN/SiC)", name: "SweGaN AB", location: "Linköping, Sweden", url: "https://swegan.se", source: "sweep",
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reason: "GaN-on-SiC epiwafer specialist (QuanFINE line) spun off Linköping University; as an epiwafer maker rather than a device maker, plausibly needs external X-ray defect/structural characterization of its own material." },
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{ division: "Semiconductor (GaN & SiC)", name: "Wolfspeed, Inc.", location: "Durham, North Carolina, USA", url: "https://wolfspeed.com",
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reason: "Largest dedicated SiC materials/wafer producer globally (Mohawk Valley fab); micropipe/dislocation density is a well-documented synchrotron-topography use case in SiC crystal-growth literature." },
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{ division: "Semiconductor (GaN & SiC)", name: "SK Siltron CSS", location: "Auburn, Michigan, USA", url: "https://sksiltroncss.com",
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{ division: "Semiconductor Materials & Substrates (GaN/SiC)", name: "SK Siltron CSS", location: "Auburn, Michigan, USA", url: "https://sksiltroncss.com", source: "sweep",
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reason: "SiC wafer supplier with a confirmed 2024 supply agreement with Infineon; plausible customer for crystal-defect qualification via synchrotron topography." },
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{ division: "Semiconductor (GaN & SiC)", name: "TanKeBlue Semiconductor Co., Ltd.", location: "Beijing, China", url: "https://en.tankeblue.com",
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{ division: "Semiconductor Materials & Substrates (GaN/SiC)", name: "TanKeBlue Semiconductor Co., Ltd.", location: "Beijing, China", url: "https://en.tankeblue.com", source: "sweep",
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reason: "Self-described pioneer of China's SiC substrate industry, founded 2006. Fit inferred from product line only, not yet confirmed against a specific published beamtime need." },
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{ division: "Semiconductor (GaN & SiC)", name: "SICC Co., Ltd.", location: "Jinan, Shandong, China", url: "https://sicc.cc",
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{ division: "Semiconductor Materials & Substrates (GaN/SiC)", name: "SICC Co., Ltd.", location: "Jinan, Shandong, China", url: "https://sicc.cc", source: "sweep",
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reason: "SiC crystal-growth manufacturer. Fit inferred from product line only, no independent confirmation of synchrotron use found." },
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{ division: "WBG Device Manufacturer", name: "Infineon Technologies AG", location: "Neubiberg, Germany", url: "https://infineon.com",
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reason: "Leading supplier of SiC MOSFETs and GaN power ICs at scale; large-volume production makes epitaxial/interface defect characterization commercially relevant." },
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{ division: "WBG Device Manufacturer", name: "X-FAB Silicon Foundries SE", location: "Erfurt, Germany (registered seat Tessenderlo, Belgium)", url: "https://xfab.com",
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{ division: "Power Electronics (Devices)", name: "Infineon Technologies AG", location: "Neubiberg, Germany", url: "https://infineon.com", source: "both",
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reason: "Peter's Phase 1 list + this sweep. Leading supplier of SiC MOSFETs and GaN power ICs at scale; large-volume production makes epitaxial/interface defect characterization commercially relevant." },
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{ division: "Power Electronics (Devices)", name: "Wolfspeed, Inc.", location: "Durham, North Carolina, USA", url: "https://wolfspeed.com", source: "both",
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reason: "Peter's Phase 1 list + this sweep. Largest dedicated SiC materials/wafer producer globally (Mohawk Valley fab) that also makes devices; micropipe/dislocation density is a well-documented synchrotron-topography use case in SiC crystal-growth literature." },
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{ division: "Power Electronics (Devices)", name: "onsemi", location: "DE / US / Asia / Canada", url: "https://www.onsemi.com", source: "peter",
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reason: "Peter's Phase 1 list. SiC power semiconductor supplier (automotive/industrial), multi-region manufacturing footprint." },
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{ division: "Power Electronics (Devices)", name: "STMicroelectronics", location: "CH / FR / IT", url: "https://www.st.com", source: "peter",
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reason: "Peter's Phase 1 list. SiC/GaN power devices; already has named researchers publishing ESRF beamtime work on phase-change memory and 3D IC characterisation — a direct synchrotron-use precedent." },
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{ division: "Power Electronics (Devices)", name: "ROHM", location: "Japan", url: "https://www.rohm.com", source: "peter",
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reason: "Peter's Phase 1 list. Major Japanese SiC power device manufacturer." },
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{ division: "Power Electronics (Devices)", name: "Renesas", location: "Japan", url: "https://www.renesas.com", source: "peter",
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reason: "Peter's Phase 1 list. GaN/SiC power device manufacturer; acquired GaN Systems in 2023 (see WBG Device Manufacturer division)." },
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{ division: "Power Electronics (Devices)", name: "Power Integrations", location: "USA", url: "https://www.power.com", source: "peter",
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reason: "Peter's Phase 1 list. GaN power IC manufacturer." },
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{ division: "Power Electronics (Devices)", name: "Navitas Semiconductor", location: "Torrance, California, USA", url: "https://navitassemi.com", source: "both",
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reason: "Peter's Phase 1 list + this sweep. GaNFast power IC maker." },
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{ division: "Power Electronics (Devices)", name: "EPC (Efficient Power Conversion)", location: "USA", url: "https://www.epc-co.com", source: "peter",
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reason: "Peter's Phase 1 list. GaN FET manufacturer." },
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{ division: "Power Electronics (Devices)", name: "Innoscience", location: "China", url: "https://www.innoscience.com", source: "peter",
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reason: "Peter's Phase 1 list. Chinese GaN power device manufacturer." },
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{ division: "Power Electronics (Devices)", name: "GaN Systems Inc.", location: "Ottawa, Ontario, Canada", source: "both",
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reason: "Peter's Phase 1 list + this sweep. Fabless GaN power switching semiconductor developer, acquired by Renesas in 2023 — Peter's sheet lists its website as infineon.com, worth double-checking whether that's a transcription artifact or reflects a different current status. Flagged as uncertain whether it still operates as an independent prospect entity." },
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{ division: "Power Electronics (Devices)", name: "Vishay Intertechnology", location: "USA", url: "https://www.vishay.com", source: "peter",
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reason: "Peter's Phase 1 list. Power discrete semiconductor manufacturer." },
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{ division: "WBG Device Manufacturer", name: "Cissoid", location: "Belgium", source: "peter",
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reason: "Peter's Phase 1 list. SiC/GaN devices for extreme-temperature applications." },
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{ division: "WBG Device Manufacturer", name: "WeEn Semiconductors", location: "China / Netherlands", source: "peter",
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reason: "Peter's Phase 1 list. SiC MOSFET manufacturer." },
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{ division: "WBG Device Manufacturer", name: "Solitron Devices", location: "USA", source: "peter",
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reason: "Peter's Phase 1 list. Discrete power devices for Hi-Rel/space applications — also relevant to Radiation Hardness." },
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{ division: "WBG Device Manufacturer", name: "NexGen Power Systems", location: "USA", source: "peter",
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reason: "Peter's Phase 1 list. GaN power device manufacturer." },
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{ division: "WBG Device Manufacturer", name: "GaNPower International", location: "Canada", source: "peter",
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reason: "Peter's Phase 1 list. GaN power device manufacturer." },
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{ division: "WBG Device Manufacturer", name: "Toshiba Electronic Devices", location: "Japan", source: "peter",
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reason: "Peter's Phase 1 list. SiC and power discrete device manufacturer." },
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{ division: "WBG Device Manufacturer", name: "X-FAB Silicon Foundries SE", location: "Erfurt, Germany (registered seat Tessenderlo, Belgium)", url: "https://xfab.com", source: "sweep",
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reason: "Self-described first pure-play foundry offering SiC and GaN process technologies; as a foundry serving many fabless WBG designers, defect/process characterization services are directly relevant." },
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{ division: "WBG Device Manufacturer", name: "GaN Systems Inc.", location: "Ottawa, Ontario, Canada",
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reason: "Fabless GaN power switching semiconductor developer, acquired by Renesas in 2023 — flagged as uncertain whether it still operates as an independent prospect entity." },
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{ division: "WBG Device Manufacturer", name: "Navitas Semiconductor", location: "Torrance, California, USA", url: "https://navitassemi.com",
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reason: "GaNFast power IC maker." },
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{ division: "WBG Device Manufacturer", name: "Transphorm Inc.", location: "Goleta, California, USA",
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{ division: "WBG Device Manufacturer", name: "Transphorm Inc.", location: "Goleta, California, USA", source: "sweep",
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reason: "GaN FET maker for high-voltage power conversion, now part of Infineon after acquisition — independent prospect status uncertain, confirm before outreach." },
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{ division: "Device Testing", name: "Reltech Limited", location: "Cambridgeshire, UK", url: "https://reltech.co.uk",
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{ division: "Device Testing", name: "Applied Technical Services (ATS)", location: "USA", source: "peter",
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reason: "Peter's Phase 1 list. Reliability and radiation testing for aerospace semiconductors." },
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{ division: "Device Testing", name: "AAA Engineering & Test Lab", location: "USA", source: "peter",
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reason: "Peter's Phase 1 list. Hi-Rel/space qualification, RadHard testing." },
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{ division: "Device Testing", name: "Radiation Test Solutions (RTS)", location: "Colorado Springs, Colorado, USA", url: "https://radiationtestsolutions.com", source: "both",
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reason: "Peter's Phase 1 list + this sweep (moved here from Radiation Hardness to match Peter's placement). Independent flash-X-ray/heavy-ion/TID radiation-hardness qualification lab (MIL-STD-750/883), spun out of Cobham's radiation-test business in 2020." },
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{ division: "Device Testing", name: "BEAMIDE", location: "EU", source: "peter",
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reason: "Peter's Phase 1 list. Irradiation testing per ECSS/ESA standards." },
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{ division: "Device Testing", name: "Reltech Limited", location: "Cambridgeshire, UK", url: "https://reltech.co.uk", source: "sweep",
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reason: "Independent lab (est. 1976) providing semiconductor qualification/reliability testing (HTOL, HAST, LTOL, THB) to fabless/IDM customers; explicitly positions itself as independent." },
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{ division: "Device Testing", name: "Integra Technologies", location: "Wichita, Kansas, USA", url: "https://integra-tech.com",
|
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{ division: "Device Testing", name: "Integra Technologies", location: "Wichita, Kansas, USA", url: "https://integra-tech.com", source: "sweep",
|
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reason: "Qualification/reliability testing for semiconductor manufacturers and military/space/aerospace/automotive OEMs, explicitly including high-voltage GaN. Some branding/location inconsistency found across sources — verify HQ directly before outreach." },
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{ division: "Device Testing", name: "SGS SA", location: "Geneva, Switzerland", url: "https://sgs.com",
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{ division: "Device Testing", name: "SGS SA", location: "Geneva, Switzerland", url: "https://sgs.com", source: "sweep",
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reason: "Global third-party AEC-Q101/AEC-Q102 semiconductor reliability/qualification testing, including automotive-grade discretes and power devices." },
|
||||
{ division: "Device Testing", name: "PCsemic (Chongqing Pingchuang Institute of Semiconductors Co., Ltd.)", location: "Chongqing, China", url: "https://pcsemic.com",
|
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{ division: "Device Testing", name: "PCsemic (Chongqing Pingchuang Institute of Semiconductors Co., Ltd.)", location: "Chongqing, China", url: "https://pcsemic.com", source: "sweep",
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||||
reason: "Operates a dedicated Power Device Reliability Laboratory (HTRB/HTGB chip-level, H3TRB/TC/HAST package-level). Independence from single device makers not yet confirmed." },
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||||
|
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{ division: "Radiation Hardness", name: "BAE Systems — Space Systems", location: "Manassas, Virginia, USA (global HQ Farnborough, UK)", url: "https://baesystems.com",
|
||||
{ division: "Radiation Hardness", name: "RADNEXT (CERN-coordinated)", location: "EU", source: "peter",
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reason: "Peter's Phase 1 list. European irradiation facility network." },
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{ division: "Radiation Hardness", name: "ESA ESTEC / TEC-QEC", location: "Netherlands", source: "peter",
|
||||
reason: "Peter's Phase 1 list. Radiation hardness assurance for space." },
|
||||
{ division: "Radiation Hardness", name: "Paul Scherrer Institute (PSI)", location: "Switzerland", source: "peter",
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reason: "Peter's Phase 1 list. Proton irradiation facility." },
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||||
{ division: "Radiation Hardness", name: "BAE Systems — Space Systems", location: "Manassas, Virginia, USA (global HQ Farnborough, UK)", url: "https://baesystems.com", source: "sweep",
|
||||
reason: "Produces the RAD5545/RAD750 radiation-hardened space processor line at a DoD Category 1A Trusted Source facility; long NASA/DoD track record." },
|
||||
{ division: "Radiation Hardness", name: "Teledyne e2v", location: "Chelmsford, Essex, UK", url: "https://teledyne-e2v.com",
|
||||
{ division: "Radiation Hardness", name: "Teledyne e2v", location: "Chelmsford, Essex, UK", url: "https://teledyne-e2v.com", source: "sweep",
|
||||
reason: "Produces radiation-hardened data converters, microprocessors, and custom ASICs for space/avionics." },
|
||||
{ division: "Radiation Hardness", name: "VORAGO Technologies", location: "Austin, Texas, USA", url: "https://voragotech.com",
|
||||
{ division: "Radiation Hardness", name: "VORAGO Technologies", location: "Austin, Texas, USA", url: "https://voragotech.com", source: "sweep",
|
||||
reason: "Rad-hard MCUs/components for space and nuclear environments via a proprietary HARDSIL process; specifics mostly sourced from company material, limited independent confirmation." },
|
||||
{ division: "Radiation Hardness", name: "Radiation Test Solutions, Inc.", location: "Colorado Springs, Colorado, USA", url: "https://radiationtestsolutions.com",
|
||||
reason: "Independent flash-X-ray/heavy-ion/TID radiation-hardness qualification lab (MIL-STD-750/883), spun out of Cobham's radiation-test business in 2020 — a test-services collaborator rather than a beamtime customer per se." },
|
||||
{ division: "Radiation Hardness", name: "Heavy Ion Facility, Université catholique de Louvain (UCLouvain)", location: "Louvain-la-Neuve, Belgium",
|
||||
{ division: "Radiation Hardness", name: "Heavy Ion Facility, Université catholique de Louvain (UCLouvain)", location: "Louvain-la-Neuve, Belgium", source: "sweep",
|
||||
reason: "ESA-preferred external single-event-effects test facility (CYCLONE cyclotron); a potential collaborator/co-location partner rather than a paying customer." },
|
||||
|
||||
{ division: "Research & Collaborations", name: "Stony Brook University — Laboratory for Synchrotron X-ray Topography", location: "Stony Brook, New York, USA",
|
||||
{ division: "Research & Collaborations", name: "Stony Brook University — Laboratory for Synchrotron X-ray Topography", location: "Stony Brook, New York, USA", source: "sweep",
|
||||
reason: "PI Michael Dudley publishes synchrotron X-ray topography of GaN and 4H-SiC power-device material (ARPA-E sponsored) — the single most directly on-topic match found in this sweep." },
|
||||
{ division: "Research & Collaborations", name: "ETH Zurich — Advanced Power Semiconductor Laboratory", location: "Zurich, Switzerland",
|
||||
{ division: "Research & Collaborations", name: "ETH Zurich — Advanced Power Semiconductor Laboratory", location: "Zurich, Switzerland", source: "sweep",
|
||||
reason: "Prof. Ulrike Grossner's group published 2025 work on defect formation in heavy-ion-degraded SiC power MOSFETs — a natural bridge between the WBG-device and rad-hardness divisions." },
|
||||
{ division: "Research & Collaborations", name: "Vanderbilt University — Institute for Space and Defense Electronics", location: "Nashville, Tennessee, USA",
|
||||
{ division: "Research & Collaborations", name: "Vanderbilt University — Institute for Space and Defense Electronics", location: "Nashville, Tennessee, USA", source: "sweep",
|
||||
reason: "Schrimpf/Fleetwood group has a long DTRA/ONR-funded track record studying radiation effects in GaN/SiC materials and devices — a strong potential co-authorship partner." },
|
||||
{ division: "Research & Collaborations", name: "University of Warwick — PEATER group", location: "Coventry, UK",
|
||||
{ division: "Research & Collaborations", name: "University of Warwick — PEATER group", location: "Coventry, UK", source: "sweep",
|
||||
reason: "Prof. Philip Mawby's 20+ year, ~25-researcher group is a major UK academic center for SiC power device/materials research that could want defect/epitaxy X-ray characterization support." },
|
||||
{ division: "Research & Collaborations", name: "NASA Goddard Space Flight Center — NEPP Program", location: "Greenbelt, Maryland, USA",
|
||||
{ division: "Research & Collaborations", name: "NASA Goddard Space Flight Center — NEPP Program", location: "Greenbelt, Maryland, USA", source: "sweep",
|
||||
reason: "Runs heavy-ion/TID radiation qualification studies on SiC/GaN power devices for spaceflight. A government research program, not a company — engagement would follow a different channel than a commercial prospect." }
|
||||
];
|
||||
var PROSPECT_METHODOLOGY = "Broad first-pass worldwide sweep (2026-08-22): targeted searches per division, cross-checking each entry's HQ across at least two independent sources (company site plus trade press, directory, or government source) where possible. Not exhaustive — skews toward English-language/Western trade press; several Chinese-manufacturer entries rely more on company-published material than independent confirmation. GaN Systems and Transphorm are flagged as recently acquired — confirm they still function as independent prospects before outreach. Treat every entry as a lead requiring direct verification before outreach or budget commitment, not a confirmed relationship.";
|
||||
var PROSPECT_METHODOLOGY = "Broad first-pass worldwide sweep (2026-08-22): targeted searches per division, cross-checking each entry's HQ across at least two independent sources (company site plus trade press, directory, or government source) where possible. Not exhaustive — skews toward English-language/Western trade press; several Chinese-manufacturer entries rely more on company-published material than independent confirmation. Merged 2026-08-22 with Peter's Phase 1 Contact List (25 entries) — his two device-side categories kept separate rather than combined, and this sweep's two genuinely new divisions (Semiconductor Materials & Substrates, Research & Collaborations) added alongside. Each card is tagged by where it came from: Peter's list, this sweep, or both. GaN Systems and Transphorm are flagged as recently acquired — confirm they still function as independent prospects before outreach. Treat every entry as a lead requiring direct verification before outreach or budget commitment, not a confirmed relationship.";
|
||||
function renderProspectScout() {
|
||||
var noteEl = document.getElementById('prospect-scout-note');
|
||||
if (noteEl) noteEl.textContent = PROSPECT_METHODOLOGY;
|
||||
@@ -1159,20 +1208,33 @@ function renderProspectScout() {
|
||||
if (!byDivision[r.division]) { byDivision[r.division] = []; order.push(r.division); }
|
||||
byDivision[r.division].push(r);
|
||||
});
|
||||
var SOURCE_LABEL = { peter: "Peter's list", sweep: "This sweep", both: "Peter's list + sweep" };
|
||||
var SOURCE_COLOR = { peter: "var(--amber)", sweep: "var(--green)", both: "var(--navy)" };
|
||||
order.forEach(function (div) {
|
||||
var panel = document.createElement('div');
|
||||
panel.className = 'panel mt24';
|
||||
var title = document.createElement('div');
|
||||
title.className = 'panel-title';
|
||||
title.textContent = div;
|
||||
title.textContent = div + ' (' + byDivision[div].length + ')';
|
||||
panel.appendChild(title);
|
||||
var grid = document.createElement('div');
|
||||
grid.className = 'client-grid';
|
||||
byDivision[div].forEach(function (c) {
|
||||
var card = document.createElement('div');
|
||||
card.className = 'client-card';
|
||||
if (c.source) {
|
||||
var badge = document.createElement('span');
|
||||
badge.className = 'tag';
|
||||
badge.style.background = 'transparent';
|
||||
badge.style.border = '1px solid ' + SOURCE_COLOR[c.source];
|
||||
badge.style.color = SOURCE_COLOR[c.source];
|
||||
badge.style.marginLeft = '0';
|
||||
badge.textContent = SOURCE_LABEL[c.source] || c.source;
|
||||
card.appendChild(badge);
|
||||
}
|
||||
var nameEl = document.createElement(c.url ? 'a' : 'div');
|
||||
nameEl.className = 'client-name';
|
||||
nameEl.style.marginTop = c.source ? '6px' : '0';
|
||||
nameEl.textContent = c.name;
|
||||
if (c.url) {
|
||||
nameEl.href = c.url;
|
||||
|
||||
Reference in new issue
Block a user