mckinley/Marketing-Intgelligence
1
0 Fork 0
Code Issues Pull Requests Actions Packages Projects Releases Wiki Activity

Rename division field to category throughout, matching Peter's terminology

Browse Source 
Peter's own Phase 1 Contact List uses "Category" for this same concept.
Since this system extends his framework rather than replacing it, his
term wins. Renamed in index.html (all 73 PROSPECT_RESULTS entries, the
render function's byCategory/order variables, and visible UI text) and
in prospect_scout.json (top-level "divisions" -> "categories", each
entry's "division" -> "category"). The 6 category values themselves
are unchanged. Verified with a real DOM render afterward: all 6 panels
and 73 cards still render correctly.
This commit is contained in:
beantownbabe committed 2026-08-22 13:43:38 +02:00
1 parent 441c3e7936
commit e0f9154fb2
2 files changed
+165 -165
Download Patch File Download Diff File Expand all files Collapse all files

No files matched your search

index.html
+91 -91
View File
@@ -302,12 +302,12 @@
<div style="font-size:14px;color:var(--txt);line-height:1.65;"><strong style="color:var(--navy);">Horizontal selling</strong> is the opposite: one generic message pushed to all industries at once. It is faster to produce but less persuasive, because no single sector sees itself reflected in it. A company selling "cloud storage" to everyone is horizontal. A company selling "clinical trial data compliance for pharma" is vertical.</div>
</div>
</div>
<div class="disclaimer">Target divisions updated 2026-08-22: pharma deprioritized. Restructured 2026-08-22 to 6 divisions after merging Peter's Phase 1 Contact List with the Prospect Scout sweep — his two device-side categories kept separate, plus 2 new divisions this sweep surfaced that his list didn't have.</div>
<div class="disclaimer">Target categories updated 2026-08-22: pharma deprioritized. Restructured 2026-08-22 to 6 categories after merging Peter's Phase 1 Contact List with the Prospect Scout sweep — his two device-side categories kept separate, plus 2 new categories this sweep surfaced that his list didn't have. Field renamed from "division" to "category" throughout to match Peter's own terminology.</div>
<div class="three-col mt16">
<div class="panel">
<div class="panel-title">Semiconductor Materials &amp; Substrates (GaN/SiC)</div>
<div class="pain-list">
<div class="pain-item" style="border-left-color:var(--blue)"><div class="pain-head">New division, not on Peter's list</div><div class="pain-body">Wafer/crystal-growth/epitaxy specialists (SweGaN, SK Siltron CSS, TanKeBlue, SICC) — none of these appeared in Peter's Phase 1 Contact List, which only covers device manufacturers. Genuinely new prospecting angle.</div></div>
<div class="pain-item" style="border-left-color:var(--blue)"><div class="pain-head">New category, not on Peter's list</div><div class="pain-body">Wafer/crystal-growth/epitaxy specialists (SweGaN, SK Siltron CSS, TanKeBlue, SICC) — none of these appeared in Peter's Phase 1 Contact List, which only covers device manufacturers. Genuinely new prospecting angle.</div></div>
<div class="pain-item" style="border-left-color:var(--blue)"><div class="pain-head">Crystal growth &amp; epitaxy QC</div><div class="pain-body">Material manufacturers need defect density, strain, and dislocation characterization during boule growth and epitaxial deposition — standard lab X-ray can't resolve this at the resolution needed.</div></div>
</div>
<div class="note mt16">Best-fit pitch: wafer/epi defect characterization beyond lab X-ray resolution. Wolfspeed also operates a major SiC wafer fab (Mohawk Valley) but is listed under Power Electronics (Devices) to match Peter's placement.</div>
@@ -316,7 +316,7 @@
<div class="panel-title">Power Electronics (Devices)</div>
<div class="pain-list">
<div class="pain-item" style="border-left-color:var(--navy)"><div class="pain-head">Peter's established-player tier</div><div class="pain-body">Peter's Phase 1 list's broader, established-name device category: Infineon, Wolfspeed, onsemi, STMicroelectronics, ROHM, Renesas, Power Integrations, Navitas, EPC, Innoscience, GaN Systems, Vishay.</div></div>
<div class="pain-item" style="border-left-color:var(--navy)"><div class="pain-head">STMicroelectronics precedent</div><div class="pain-body">STMicroelectronics already has named researchers publishing ESRF beamtime work on phase-change memory and 3D IC characterisation — an existing proof point for this division.</div></div>
<div class="pain-item" style="border-left-color:var(--navy)"><div class="pain-head">STMicroelectronics precedent</div><div class="pain-body">STMicroelectronics already has named researchers publishing ESRF beamtime work on phase-change memory and 3D IC characterisation — an existing proof point for this category.</div></div>
</div>
<div class="note mt16">Best-fit pitch: device-level reliability and in-situ characterization at scale.</div>
</div>
@@ -349,7 +349,7 @@
<div class="panel">
<div class="panel-title">Research &amp; Collaborations</div>
<div class="pain-list">
<div class="pain-item" style="border-left-color:var(--yellow)"><div class="pain-head">New division, not on Peter's list</div><div class="pain-body">Academic and national-lab groups already publishing GaN/SiC or power-device X-ray characterization work are potential co-authorship/joint-beamtime-application partners, not just prospects — a second angle this sweep surfaced that wasn't in Peter's device-focused list.</div></div>
<div class="pain-item" style="border-left-color:var(--yellow)"><div class="pain-head">New category, not on Peter's list</div><div class="pain-body">Academic and national-lab groups already publishing GaN/SiC or power-device X-ray characterization work are potential co-authorship/joint-beamtime-application partners, not just prospects — a second angle this sweep surfaced that wasn't in Peter's device-focused list.</div></div>
<div class="pain-item" style="border-left-color:var(--yellow)"><div class="pain-head">NOBUGS / DESY proximity</div><div class="pain-body">DESY/European XFEL-hosted events like NOBUGS put TXproducts on its home campus alongside exactly this kind of research collaborator.</div></div>
</div>
<div class="note mt16">Best-fit pitch: joint proposals and shared beamtime access, not a direct sale.</div>
@@ -904,7 +904,7 @@
<tr><td class="name">UKRI / ESRF Impact Evaluation (2023)</td><td>~5% of ESRF users from industry (2011-2021); pain points documented</td><td><a class="li-link" href="https://www.ukri.org/wp-content/uploads/2023/08/STFC-030823-EuropeanSynchrotronRadiationFacilityImpactEvaluationReport.pdf" target="_blank">View PDF</a></td></tr>
<tr><td class="name">NSLS-II Proprietary Research Policy</td><td>$790/hr FY2026; 100% advance payment; 2-hour minimum</td><td><a class="li-link" href="https://www.bnl.gov/nsls2/docs/pdf/proprietaryresearchpolicyandprocedure.pdf" target="_blank">View PDF</a></td></tr>
<tr><td class="name">NSLS-II Industry Workshop Report (2020)</td><td>Documented barriers: unfamiliarity, no expertise, long lead times, cost, legal concerns</td><td><a class="li-link" href="https://www.bnl.gov/nsls2/docs/pdf/2020-industry-workshop-report.pdf" target="_blank">View PDF</a></td></tr>
<tr><td class="name">Yole Group</td><td>Peter's source for the power electronics / WBG (GaN, SiC) market and device-maker landscape; publishes quarterly — recheck each quarter for updated company lists feeding the Semiconductor and WBG Device Manufacturer Prospect Scout divisions</td><td><a class="li-link" href="https://www.yolegroup.com/" target="_blank">View site</a></td></tr>
<tr><td class="name">Yole Group</td><td>Peter's source for the power electronics / WBG (GaN, SiC) market and device-maker landscape; publishes quarterly — recheck each quarter for updated company lists feeding the Semiconductor and WBG Device Manufacturer Prospect Scout categories</td><td><a class="li-link" href="https://www.yolegroup.com/" target="_blank">View site</a></td></tr>
</tbody>
</table></div>
</div>
@@ -990,10 +990,10 @@
<div class="section" id="prospectscout">
<div class="sec-head">
<div class="sec-title">Prospect Scout</div>
<div class="sec-sub">Worldwide sweep for companies and research groups matching TXproducts' 5 target divisions</div>
<div class="sec-sub">Worldwide sweep for companies and research groups matching TXproducts' 6 target categories</div>
</div>
<div class="disclaimer" id="prospect-scout-note">Sweep pending.</div>
<div class="note mt16">Semiconductor &amp; WBG Device Manufacturer divisions: Yole Group publishes quarterly (see Sources → Market Sizing) — recheck their latest report each quarter for new companies to fold into the next sweep.</div>
<div class="note mt16">Semiconductor &amp; WBG Device Manufacturer categories: Yole Group publishes quarterly (see Sources → Market Sizing) — recheck their latest report each quarter for new companies to fold into the next sweep.</div>
<div id="prospect-scout-groups"></div>
</div>
@@ -1100,168 +1100,168 @@ function show(id, btn) {
/* ---------- Prospect Scout results ----------
Snapshot of the periodic research sweep's report, hand-reviewed and pasted in here.
Each entry: { division, name, location, url, reason }. */
Each entry: { category, name, location, url, reason }. */
var PROSPECT_RESULTS = [
{ division: "Semiconductor Materials & Substrates (GaN/SiC)", name: "SweGaN AB", location: "Linköping, Sweden", url: "https://swegan.se", source: "sweep",
{ category: "Semiconductor Materials & Substrates (GaN/SiC)", name: "SweGaN AB", location: "Linköping, Sweden", url: "https://swegan.se", source: "sweep",
reason: "GaN-on-SiC epiwafer specialist (QuanFINE line) spun off Linköping University; as an epiwafer maker rather than a device maker, plausibly needs external X-ray defect/structural characterization of its own material." },
{ division: "Semiconductor Materials & Substrates (GaN/SiC)", name: "SK Siltron CSS", location: "Auburn, Michigan, USA", url: "https://sksiltroncss.com", source: "sweep",
{ category: "Semiconductor Materials & Substrates (GaN/SiC)", name: "SK Siltron CSS", location: "Auburn, Michigan, USA", url: "https://sksiltroncss.com", source: "sweep",
reason: "SiC wafer supplier with a confirmed 2024 supply agreement with Infineon; plausible customer for crystal-defect qualification via synchrotron topography." },
{ division: "Semiconductor Materials & Substrates (GaN/SiC)", name: "TanKeBlue Semiconductor Co., Ltd.", location: "Beijing, China", url: "https://en.tankeblue.com", source: "sweep",
{ category: "Semiconductor Materials & Substrates (GaN/SiC)", name: "TanKeBlue Semiconductor Co., Ltd.", location: "Beijing, China", url: "https://en.tankeblue.com", source: "sweep",
reason: "Self-described pioneer of China's SiC substrate industry, founded 2006. Fit inferred from product line only, not yet confirmed against a specific published beamtime need." },
{ division: "Semiconductor Materials & Substrates (GaN/SiC)", name: "SICC Co., Ltd.", location: "Jinan, Shandong, China", url: "https://sicc.cc", source: "sweep",
{ category: "Semiconductor Materials & Substrates (GaN/SiC)", name: "SICC Co., Ltd.", location: "Jinan, Shandong, China", url: "https://sicc.cc", source: "sweep",
reason: "SiC crystal-growth manufacturer. Fit inferred from product line only, no independent confirmation of synchrotron use found." },
{ division: "Semiconductor Materials & Substrates (GaN/SiC)", name: "Resonac (formerly Showa Denko)", location: "Tokyo, Japan", url: "https://resonac.com", source: "sweep",
{ category: "Semiconductor Materials & Substrates (GaN/SiC)", name: "Resonac (formerly Showa Denko)", location: "Tokyo, Japan", url: "https://resonac.com", source: "sweep",
reason: "World's largest independent supplier of SiC epitaxial wafers; expanding 150mm capacity to ~50,000 wafers/month and starting 200mm mass production, partnering with Soitec on 200mm bonded SiC substrates." },
{ division: "Semiconductor Materials & Substrates (GaN/SiC)", name: "Coherent Corp.", location: "Saxonburg, Pennsylvania, USA", url: "https://coherent.com", source: "sweep",
{ category: "Semiconductor Materials & Substrates (GaN/SiC)", name: "Coherent Corp.", location: "Saxonburg, Pennsylvania, USA", url: "https://coherent.com", source: "sweep",
reason: "Producer of SiC substrates/epitaxy up to 200mm diameter for power electronics (formerly II-VI Advanced Materials)." },
{ division: "Semiconductor Materials & Substrates (GaN/SiC)", name: "Soitec", location: "Bernin, France", url: "https://soitec.com", source: "sweep",
{ category: "Semiconductor Materials & Substrates (GaN/SiC)", name: "Soitec", location: "Bernin, France", url: "https://soitec.com", source: "sweep",
reason: "Independent engineered-substrate specialist; its SmartSiC bonded-SiC technology is adopted by STMicroelectronics for future 200mm substrates." },
{ division: "Semiconductor Materials & Substrates (GaN/SiC)", name: "TekSiC AB", location: "Linköping, Sweden", url: "https://teksic.com", source: "sweep",
{ category: "Semiconductor Materials & Substrates (GaN/SiC)", name: "TekSiC AB", location: "Linköping, Sweden", url: "https://teksic.com", source: "sweep",
reason: "Founded 2021, building Europe's first domestic semi-insulating SiC wafer supply for GaN RF/defense/satcom, using a proprietary PVT growth reactor. Early-stage — customer-validation wafers not expected until mid-2027, flag as pre-commercial." },
{ division: "Semiconductor Materials & Substrates (GaN/SiC)", name: "Kyma Technologies", location: "Raleigh, North Carolina, USA", url: "https://kymatech.com", source: "sweep",
{ category: "Semiconductor Materials & Substrates (GaN/SiC)", name: "Kyma Technologies", location: "Raleigh, North Carolina, USA", url: "https://kymatech.com", source: "sweep",
reason: "US supplier of bulk GaN substrates; partnership with Qromis demonstrated 200mm GaN-on-QST engineered substrates." },
{ division: "Power Electronics (Devices)", name: "Infineon Technologies AG", location: "Neubiberg, Germany", url: "https://infineon.com", source: "both",
{ category: "Power Electronics (Devices)", name: "Infineon Technologies AG", location: "Neubiberg, Germany", url: "https://infineon.com", source: "both",
reason: "Peter's Phase 1 list + this sweep. Leading supplier of SiC MOSFETs and GaN power ICs at scale; large-volume production makes epitaxial/interface defect characterization commercially relevant." },
{ division: "Power Electronics (Devices)", name: "Wolfspeed, Inc.", location: "Durham, North Carolina, USA", url: "https://wolfspeed.com", source: "both",
{ category: "Power Electronics (Devices)", name: "Wolfspeed, Inc.", location: "Durham, North Carolina, USA", url: "https://wolfspeed.com", source: "both",
reason: "Peter's Phase 1 list + this sweep. Largest dedicated SiC materials/wafer producer globally (Mohawk Valley fab) that also makes devices; micropipe/dislocation density is a well-documented synchrotron-topography use case in SiC crystal-growth literature." },
{ division: "Power Electronics (Devices)", name: "onsemi", location: "DE / US / Asia / Canada", url: "https://www.onsemi.com", source: "peter",
{ category: "Power Electronics (Devices)", name: "onsemi", location: "DE / US / Asia / Canada", url: "https://www.onsemi.com", source: "peter",
reason: "Peter's Phase 1 list. SiC power semiconductor supplier (automotive/industrial), multi-region manufacturing footprint." },
{ division: "Power Electronics (Devices)", name: "STMicroelectronics", location: "CH / FR / IT", url: "https://www.st.com", source: "peter",
{ category: "Power Electronics (Devices)", name: "STMicroelectronics", location: "CH / FR / IT", url: "https://www.st.com", source: "peter",
reason: "Peter's Phase 1 list. SiC/GaN power devices; already has named researchers publishing ESRF beamtime work on phase-change memory and 3D IC characterisation — a direct synchrotron-use precedent." },
{ division: "Power Electronics (Devices)", name: "ROHM", location: "Japan", url: "https://www.rohm.com", source: "peter",
{ category: "Power Electronics (Devices)", name: "ROHM", location: "Japan", url: "https://www.rohm.com", source: "peter",
reason: "Peter's Phase 1 list. Major Japanese SiC power device manufacturer." },
{ division: "Power Electronics (Devices)", name: "Renesas", location: "Japan", url: "https://www.renesas.com", source: "peter",
reason: "Peter's Phase 1 list. GaN/SiC power device manufacturer; acquired GaN Systems in 2023 (see WBG Device Manufacturer division)." },
{ division: "Power Electronics (Devices)", name: "Power Integrations", location: "USA", url: "https://www.power.com", source: "peter",
{ category: "Power Electronics (Devices)", name: "Renesas", location: "Japan", url: "https://www.renesas.com", source: "peter",
reason: "Peter's Phase 1 list. GaN/SiC power device manufacturer; acquired GaN Systems in 2023 (see WBG Device Manufacturer category)." },
{ category: "Power Electronics (Devices)", name: "Power Integrations", location: "USA", url: "https://www.power.com", source: "peter",
reason: "Peter's Phase 1 list. GaN power IC manufacturer." },
{ division: "Power Electronics (Devices)", name: "Navitas Semiconductor", location: "Torrance, California, USA", url: "https://navitassemi.com", source: "both",
{ category: "Power Electronics (Devices)", name: "Navitas Semiconductor", location: "Torrance, California, USA", url: "https://navitassemi.com", source: "both",
reason: "Peter's Phase 1 list + this sweep. GaNFast power IC maker." },
{ division: "Power Electronics (Devices)", name: "EPC (Efficient Power Conversion)", location: "USA", url: "https://www.epc-co.com", source: "peter",
{ category: "Power Electronics (Devices)", name: "EPC (Efficient Power Conversion)", location: "USA", url: "https://www.epc-co.com", source: "peter",
reason: "Peter's Phase 1 list. GaN FET manufacturer." },
{ division: "Power Electronics (Devices)", name: "Innoscience", location: "China", url: "https://www.innoscience.com", source: "peter",
{ category: "Power Electronics (Devices)", name: "Innoscience", location: "China", url: "https://www.innoscience.com", source: "peter",
reason: "Peter's Phase 1 list. Chinese GaN power device manufacturer." },
{ division: "Power Electronics (Devices)", name: "GaN Systems Inc.", location: "Ottawa, Ontario, Canada", url: "https://www.gansystems.com", source: "both",
{ category: "Power Electronics (Devices)", name: "GaN Systems Inc.", location: "Ottawa, Ontario, Canada", url: "https://www.gansystems.com", source: "both",
reason: "Peter's Phase 1 list + this sweep. Fabless GaN power switching semiconductor developer, acquired by Infineon in 2023 — Peter's sheet also lists its website as infineon.com, consistent with the acquisition. Flagged as uncertain whether it still operates as an independent prospect entity or is now folded fully into Infineon.",
correction: "Edited 2026-08-22: an earlier pass had this backwards, saying GaN Systems was acquired by Renesas. Verified via web search — Infineon acquired GaN Systems (2023); Renesas acquired Transphorm instead (see that entry)." },
{ division: "Power Electronics (Devices)", name: "Vishay Intertechnology", location: "USA", url: "https://www.vishay.com", source: "peter",
{ category: "Power Electronics (Devices)", name: "Vishay Intertechnology", location: "USA", url: "https://www.vishay.com", source: "peter",
reason: "Peter's Phase 1 list. Power discrete semiconductor manufacturer." },
{ division: "Power Electronics (Devices)", name: "Mitsubishi Electric", location: "Tokyo, Japan", url: "https://www.mitsubishielectric.com", source: "sweep",
{ category: "Power Electronics (Devices)", name: "Mitsubishi Electric", location: "Tokyo, Japan", url: "https://www.mitsubishielectric.com", source: "sweep",
reason: "Long-standing SiC power module producer (first all-SiC module for Shinkansen trains, 2015); new 200mm SiC wafer fab completed in Kumamoto, Oct 2025; states a goal to be #1 power semiconductor maker by 2030." },
{ division: "Power Electronics (Devices)", name: "Fuji Electric", location: "Tokyo, Japan", url: "https://www.fujielectric.com", source: "sweep",
{ category: "Power Electronics (Devices)", name: "Fuji Electric", location: "Tokyo, Japan", url: "https://www.fujielectric.com", source: "sweep",
reason: "Established SiC device/module manufacturer (hybrid Si-IGBT/SiC and full-SiC modules); active EV partnership with Denso on SiC." },
{ division: "Power Electronics (Devices)", name: "Nexperia", location: "Nijmegen, Netherlands (WBG fab in Hamburg, Germany)", url: "https://nexperia.com", source: "sweep",
{ category: "Power Electronics (Devices)", name: "Nexperia", location: "Nijmegen, Netherlands (WBG fab in Hamburg, Germany)", url: "https://nexperia.com", source: "sweep",
reason: "GaN FET (CCPAK) and SiC MOSFET lines, including devices co-developed with Mitsubishi Electric; $200M investment announced to expand WBG production at its Hamburg fab — notably close to TXproducts' DESY Hamburg beamtime connection." },
{ division: "Power Electronics (Devices)", name: "Semikron Danfoss", location: "Nuremberg, Germany / Denmark", url: "https://semikron-danfoss.com", source: "sweep",
{ category: "Power Electronics (Devices)", name: "Semikron Danfoss", location: "Nuremberg, Germany / Denmark", url: "https://semikron-danfoss.com", source: "sweep",
reason: "Largest chip-independent power module manufacturer, partnered with all major SiC chip suppliers; dedicated SiC MOSFET/hybrid module lines up to 600A/1700V." },
{ division: "Power Electronics (Devices)", name: "Microchip Technology", location: "Chandler, Arizona, USA", url: "https://www.microchip.com", source: "sweep",
{ category: "Power Electronics (Devices)", name: "Microchip Technology", location: "Chandler, Arizona, USA", url: "https://www.microchip.com", source: "sweep",
reason: "Scalable GaN power IC and SiC discrete/module portfolio for industrial, automotive, and aerospace/defense. Also has a distinct rad-hard/rad-tolerant space product line, listed separately under Radiation Hardness." },
{ division: "WBG Device Manufacturer", name: "Cissoid", location: "Belgium", url: "https://www.cissoid.com", source: "peter",
{ category: "WBG Device Manufacturer", name: "Cissoid", location: "Belgium", url: "https://www.cissoid.com", source: "peter",
reason: "Peter's Phase 1 list. SiC/GaN devices for extreme-temperature applications." },
{ division: "WBG Device Manufacturer", name: "WeEn Semiconductors", location: "China / Netherlands", url: "https://www.ween-semi.com", source: "peter",
{ category: "WBG Device Manufacturer", name: "WeEn Semiconductors", location: "China / Netherlands", url: "https://www.ween-semi.com", source: "peter",
reason: "Peter's Phase 1 list. SiC MOSFET manufacturer." },
{ division: "WBG Device Manufacturer", name: "Solitron Devices", location: "USA", url: "https://solitrondevices.com", source: "peter",
{ category: "WBG Device Manufacturer", name: "Solitron Devices", location: "USA", url: "https://solitrondevices.com", source: "peter",
reason: "Peter's Phase 1 list. Discrete power devices for Hi-Rel/space applications — also relevant to Radiation Hardness." },
{ division: "WBG Device Manufacturer", name: "NexGen Power Systems", location: "USA", url: "https://www.nexgenpowersystems.com", source: "peter",
{ category: "WBG Device Manufacturer", name: "NexGen Power Systems", location: "USA", url: "https://www.nexgenpowersystems.com", source: "peter",
reason: "Peter's Phase 1 list. GaN power device manufacturer." },
{ division: "WBG Device Manufacturer", name: "GaNPower International", location: "Canada", url: "https://iganpower.com", source: "peter",
{ category: "WBG Device Manufacturer", name: "GaNPower International", location: "Canada", url: "https://iganpower.com", source: "peter",
reason: "Peter's Phase 1 list. GaN power device manufacturer." },
{ division: "WBG Device Manufacturer", name: "Toshiba Electronic Devices", location: "Japan", url: "https://toshiba.semicon-storage.com", source: "peter",
{ category: "WBG Device Manufacturer", name: "Toshiba Electronic Devices", location: "Japan", url: "https://toshiba.semicon-storage.com", source: "peter",
reason: "Peter's Phase 1 list. SiC and power discrete device manufacturer." },
{ division: "WBG Device Manufacturer", name: "X-FAB Silicon Foundries SE", location: "Erfurt, Germany (registered seat Tessenderlo, Belgium)", url: "https://xfab.com", source: "sweep",
{ category: "WBG Device Manufacturer", name: "X-FAB Silicon Foundries SE", location: "Erfurt, Germany (registered seat Tessenderlo, Belgium)", url: "https://xfab.com", source: "sweep",
reason: "Self-described first pure-play foundry offering SiC and GaN process technologies; as a foundry serving many fabless WBG designers, defect/process characterization services are directly relevant." },
{ division: "WBG Device Manufacturer", name: "Transphorm Inc.", location: "Goleta, California, USA", url: "https://www.transphormusa.com", source: "sweep",
{ category: "WBG Device Manufacturer", name: "Transphorm Inc.", location: "Goleta, California, USA", url: "https://www.transphormusa.com", source: "sweep",
reason: "GaN FET maker for high-voltage power conversion, acquired by Renesas (completed June 2024, corrected — an earlier pass wrongly attributed this to Infineon) — independent prospect status uncertain, confirm before outreach.",
correction: "Edited 2026-08-22: an earlier pass had this backwards, saying Transphorm was acquired by Infineon. Verified via web search — Renesas acquired Transphorm (completed June 2024); Infineon acquired GaN Systems instead (see that entry)." },
{ division: "WBG Device Manufacturer", name: "GeneSiC Semiconductor", location: "Dulles, Virginia, USA", url: "https://genesic.com", source: "sweep",
{ category: "WBG Device Manufacturer", name: "GeneSiC Semiconductor", location: "Dulles, Virginia, USA", url: "https://genesic.com", source: "sweep",
reason: "SiC pioneer (founded 2004) making SiC rectifiers, transistors, and thyristors; acquired by Navitas Semiconductor in 2022 but still operates as a distinct SiC device brand/line." },
{ division: "WBG Device Manufacturer", name: "Qorvo Power Device Solutions (ex-United Silicon Carbide/UnitedSiC)", location: "Princeton, New Jersey, USA", url: "https://www.qorvo.com", source: "sweep",
{ category: "WBG Device Manufacturer", name: "Qorvo Power Device Solutions (ex-United Silicon Carbide/UnitedSiC)", location: "Princeton, New Jersey, USA", url: "https://www.qorvo.com", source: "sweep",
reason: "Specialist SiC FET/JFET/Schottky diode portfolio (80+ devices), including 750V/5.9mΩ Gen4 SiC FETs; acquired by Qorvo in 2021, operates within Qorvo's Infrastructure & Defense Products unit as a distinct SiC line." },
{ division: "WBG Device Manufacturer", name: "Powdec K.K.", location: "Oyama City, Tochigi, Japan", url: "https://www.powdec.co.jp/english/", source: "sweep",
{ category: "WBG Device Manufacturer", name: "Powdec K.K.", location: "Oyama City, Tochigi, Japan", url: "https://www.powdec.co.jp/english/", source: "sweep",
reason: "Specialist in GaN-on-GaN epitaxial wafers and devices, holder of PSJ-GaN (Polarization Super Junction GaN) patents. Acquired by Sanken Electric in March 2025." },
{ division: "WBG Device Manufacturer", name: "STARPOWER Semiconductor", location: "Jiaxing, Zhejiang, China", url: "https://www.powersemi.com", source: "sweep",
{ category: "WBG Device Manufacturer", name: "STARPOWER Semiconductor", location: "Jiaxing, Zhejiang, China", url: "https://www.powersemi.com", source: "sweep",
reason: "IGBT/SiC module manufacturer, ranked #5 globally in IGBT modules (2022, #1 among Chinese firms), Shanghai-listed (603290), with R&D/HQ presence in Switzerland and Germany." },
{ division: "Device Testing", name: "Applied Technical Services (ATS)", location: "USA", url: "https://atslab.com", source: "peter",
{ category: "Device Testing", name: "Applied Technical Services (ATS)", location: "USA", url: "https://atslab.com", source: "peter",
reason: "Peter's Phase 1 list. Reliability and radiation testing for aerospace semiconductors. Now operates under SGS (see SGS SA entry below) but continues under its own brand." },
{ division: "Device Testing", name: "AAA Engineering & Test Lab", location: "USA", url: "https://aaactl.com", source: "peter",
{ category: "Device Testing", name: "AAA Engineering & Test Lab", location: "USA", url: "https://aaactl.com", source: "peter",
reason: "Peter's Phase 1 list. Hi-Rel/space qualification, RadHard testing." },
{ division: "Device Testing", name: "Radiation Test Solutions (RTS)", location: "Colorado Springs, Colorado, USA", url: "https://radiationtestsolutions.com", source: "both",
{ category: "Device Testing", name: "Radiation Test Solutions (RTS)", location: "Colorado Springs, Colorado, USA", url: "https://radiationtestsolutions.com", source: "both",
reason: "Peter's Phase 1 list + this sweep (moved here from Radiation Hardness to match Peter's placement). Independent flash-X-ray/heavy-ion/TID radiation-hardness qualification lab (MIL-STD-750/883), spun out of Cobham's radiation-test business in 2020." },
{ division: "Device Testing", name: "BEAMIDE", location: "EU", url: "https://www.beamide.com", source: "peter",
{ category: "Device Testing", name: "BEAMIDE", location: "EU", url: "https://www.beamide.com", source: "peter",
reason: "Peter's Phase 1 list. Irradiation testing per ECSS/ESA standards." },
{ division: "Device Testing", name: "Reltech Limited", location: "Cambridgeshire, UK", url: "https://reltech.co.uk", source: "sweep",
{ category: "Device Testing", name: "Reltech Limited", location: "Cambridgeshire, UK", url: "https://reltech.co.uk", source: "sweep",
reason: "Independent lab (est. 1976) providing semiconductor qualification/reliability testing (HTOL, HAST, LTOL, THB) to fabless/IDM customers; explicitly positions itself as independent." },
{ division: "Device Testing", name: "Integra Technologies", location: "Wichita, Kansas, USA", url: "https://integra-tech.com", source: "sweep",
{ category: "Device Testing", name: "Integra Technologies", location: "Wichita, Kansas, USA", url: "https://integra-tech.com", source: "sweep",
reason: "Qualification/reliability testing for semiconductor manufacturers and military/space/aerospace/automotive OEMs, explicitly including high-voltage GaN. Some branding/location inconsistency found across sources — verify HQ directly before outreach." },
{ division: "Device Testing", name: "SGS SA", location: "Geneva, Switzerland", url: "https://sgs.com", source: "sweep",
{ category: "Device Testing", name: "SGS SA", location: "Geneva, Switzerland", url: "https://sgs.com", source: "sweep",
reason: "Global third-party AEC-Q101/AEC-Q102 semiconductor reliability/qualification testing, including automotive-grade discretes and power devices." },
{ division: "Device Testing", name: "PCsemic (Chongqing Pingchuang Institute of Semiconductors Co., Ltd.)", location: "Chongqing, China", url: "https://pcsemic.com", source: "sweep",
{ category: "Device Testing", name: "PCsemic (Chongqing Pingchuang Institute of Semiconductors Co., Ltd.)", location: "Chongqing, China", url: "https://pcsemic.com", source: "sweep",
reason: "Operates a dedicated Power Device Reliability Laboratory (HTRB/HTGB chip-level, H3TRB/TC/HAST package-level). Independence from single device makers not yet confirmed." },
{ division: "Device Testing", name: "Presto Engineering", location: "Caen, France", url: "https://www.presto-eng.com", source: "sweep",
{ category: "Device Testing", name: "Presto Engineering", location: "Caen, France", url: "https://www.presto-eng.com", source: "sweep",
reason: "Independent semiconductor test/failure-analysis/qualification house on a former NXP facility; >€50M invested across 4 test floors, explicit die-, package-, and board-level qualification services." },
{ division: "Device Testing", name: "Aehr Test Systems", location: "Fremont, California, USA", url: "https://www.aehr.com", source: "sweep",
{ category: "Device Testing", name: "Aehr Test Systems", location: "Fremont, California, USA", url: "https://www.aehr.com", source: "sweep",
reason: "States it is the leader in wafer-level burn-in specifically for SiC and GaN devices — directly on-topic for WBG device qualification, feeding failure-mode data back to fabs/designers." },
{ division: "Device Testing", name: "Ansys Reliability Engineering Services (formerly DfR Solutions)", location: "College Park, Maryland, USA", url: "https://www.ansys.com", source: "sweep",
{ category: "Device Testing", name: "Ansys Reliability Engineering Services (formerly DfR Solutions)", location: "College Park, Maryland, USA", url: "https://www.ansys.com", source: "sweep",
reason: "Independent reliability lab (20,000 sq ft facility): accelerated life testing, failure analysis, component reliability and materials characterization." },
{ division: "Device Testing", name: "EAG Laboratories", location: "Multiple US/global sites", url: "https://www.eag.com", source: "sweep",
{ category: "Device Testing", name: "EAG Laboratories", location: "Multiple US/global sites", url: "https://www.eag.com", source: "sweep",
reason: "Independent reliability/qualification lab offering HTOL, thermal shock, preconditioning, THB, and HAST testing services." },
{ division: "Device Testing", name: "Element Materials Technology (formerly NTS)", location: "London, UK (global sites)", url: "https://www.element.com", source: "sweep",
{ category: "Device Testing", name: "Element Materials Technology (formerly NTS)", location: "London, UK (global sites)", url: "https://www.element.com", source: "sweep",
reason: "Broad qualification/certification testing services including a defense/space division (Element U.S. Space and Defense); a general provider rather than SiC/GaN-specific, useful as a large umbrella contact." },
{ division: "Radiation Hardness", name: "RADNEXT (CERN-coordinated)", location: "EU", url: "https://radnext.web.cern.ch", source: "peter",
{ category: "Radiation Hardness", name: "RADNEXT (CERN-coordinated)", location: "EU", url: "https://radnext.web.cern.ch", source: "peter",
reason: "Peter's Phase 1 list. European irradiation facility network." },
{ division: "Radiation Hardness", name: "ESA ESTEC / TEC-QEC", location: "Netherlands", url: "https://www.esa.int/Enabling_Support/Space_Engineering_Technology/Radiation_a_testing_challenge", source: "peter",
{ category: "Radiation Hardness", name: "ESA ESTEC / TEC-QEC", location: "Netherlands", url: "https://www.esa.int/Enabling_Support/Space_Engineering_Technology/Radiation_a_testing_challenge", source: "peter",
reason: "Peter's Phase 1 list. Radiation hardness assurance for space. No dedicated public TEC-QEC page found — linked to ESA's general radiation-testing overview instead; ESCIES (escies.org) is the closest detailed public resource." },
{ division: "Radiation Hardness", name: "Paul Scherrer Institute (PSI)", location: "Switzerland", url: "https://www.psi.ch/en", source: "peter",
{ category: "Radiation Hardness", name: "Paul Scherrer Institute (PSI)", location: "Switzerland", url: "https://www.psi.ch/en", source: "peter",
reason: "Peter's Phase 1 list. Proton irradiation facility." },
{ division: "Radiation Hardness", name: "BAE Systems — Space Systems", location: "Manassas, Virginia, USA (global HQ Farnborough, UK)", url: "https://baesystems.com", source: "sweep",
{ category: "Radiation Hardness", name: "BAE Systems — Space Systems", location: "Manassas, Virginia, USA (global HQ Farnborough, UK)", url: "https://baesystems.com", source: "sweep",
reason: "Produces the RAD5545/RAD750 radiation-hardened space processor line at a DoD Category 1A Trusted Source facility; long NASA/DoD track record." },
{ division: "Radiation Hardness", name: "Teledyne e2v", location: "Chelmsford, Essex, UK", url: "https://teledyne-e2v.com", source: "sweep",
{ category: "Radiation Hardness", name: "Teledyne e2v", location: "Chelmsford, Essex, UK", url: "https://teledyne-e2v.com", source: "sweep",
reason: "Produces radiation-hardened data converters, microprocessors, and custom ASICs for space/avionics." },
{ division: "Radiation Hardness", name: "VORAGO Technologies", location: "Austin, Texas, USA", url: "https://voragotech.com", source: "sweep",
{ category: "Radiation Hardness", name: "VORAGO Technologies", location: "Austin, Texas, USA", url: "https://voragotech.com", source: "sweep",
reason: "Rad-hard MCUs/components for space and nuclear environments via a proprietary HARDSIL process; specifics mostly sourced from company material, limited independent confirmation." },
{ division: "Radiation Hardness", name: "Heavy Ion Facility, Université catholique de Louvain (UCLouvain)", location: "Louvain-la-Neuve, Belgium", url: "https://www.uclouvain.be/en/research-institutes/irmp/heavy-ion-facility-hif", source: "sweep",
{ category: "Radiation Hardness", name: "Heavy Ion Facility, Université catholique de Louvain (UCLouvain)", location: "Louvain-la-Neuve, Belgium", url: "https://www.uclouvain.be/en/research-institutes/irmp/heavy-ion-facility-hif", source: "sweep",
reason: "ESA-preferred external single-event-effects test facility (CYCLONE cyclotron); a potential collaborator/co-location partner rather than a paying customer." },
{ division: "Radiation Hardness", name: "TTM Technologies", location: "Costa Mesa, California, USA", url: "https://www.ttm.com", source: "sweep",
{ category: "Radiation Hardness", name: "TTM Technologies", location: "Costa Mesa, California, USA", url: "https://www.ttm.com", source: "sweep",
reason: "Supplier of rad-hard microcircuits to aerospace/space/defense, certified to MIL-PRF-38534 Class H and Class K (space-grade)." },
{ division: "Radiation Hardness", name: "Data Device Corporation (DDC)", location: "Bohemia, New York, USA (Center of Excellence in Poway, CA)", url: "https://www.ddc-web.com", source: "sweep",
{ category: "Radiation Hardness", name: "Data Device Corporation (DDC)", location: "Bohemia, New York, USA (Center of Excellence in Poway, CA)", url: "https://www.ddc-web.com", source: "sweep",
reason: "Runs a \"Center of Excellence for Radiation Tolerant Microelectronics and Single Board Computers,\" qualified to MIL-PRF-38534/38535." },
{ division: "Radiation Hardness", name: "Frontgrade Gaisler", location: "Gothenburg, Sweden", url: "https://www.gaisler.com", source: "sweep",
{ category: "Radiation Hardness", name: "Frontgrade Gaisler", location: "Gothenburg, Sweden", url: "https://www.gaisler.com", source: "sweep",
reason: "Maker of rad-hard LEON-family processors (GR712RC, GR740) flown on hundreds of spacecraft; GR740 designated ESA's \"Next Generation Microprocessor,\" close ESA/industry ties." },
{ division: "Radiation Hardness", name: "RADEF (Radiation Effects Facility), University of Jyväskylä", location: "Jyväskylä, Finland", url: "https://www.jyu.fi", source: "sweep",
{ category: "Radiation Hardness", name: "RADEF (Radiation Effects Facility), University of Jyväskylä", location: "Jyväskylä, Finland", url: "https://www.jyu.fi", source: "sweep",
reason: "ESA-supported European Component Irradiation Facility (since 2005) providing proton/heavy-ion/electron irradiation testing for space electronics, used by ESA, NASA, JAXA, CNES and European industry — a peer facility to the already-listed PSI and UCLouvain sites." },
{ division: "Radiation Hardness", name: "Microchip Technology (rad-hard/rad-tolerant line)", location: "Chandler, Arizona, USA", url: "https://www.microchip.com", source: "sweep",
{ category: "Radiation Hardness", name: "Microchip Technology (rad-hard/rad-tolerant line)", location: "Chandler, Arizona, USA", url: "https://www.microchip.com", source: "sweep",
reason: "Same company as the Power Electronics (Devices) entry above, listed here separately for its distinct aerospace rad-hard/rad-tolerant product line — states it offers one of the widest selections of rad-hard/rad-tolerant parts for space." },
{ division: "Research & Collaborations", name: "Stony Brook University — Laboratory for Synchrotron X-ray Topography", location: "Stony Brook, New York, USA", url: "https://you.stonybrook.edu/xraycharacterization/", source: "sweep",
{ category: "Research & Collaborations", name: "Stony Brook University — Laboratory for Synchrotron X-ray Topography", location: "Stony Brook, New York, USA", url: "https://you.stonybrook.edu/xraycharacterization/", source: "sweep",
reason: "PI Michael Dudley publishes synchrotron X-ray topography of GaN and 4H-SiC power-device material (ARPA-E sponsored) — the single most directly on-topic match found in this sweep." },
{ division: "Research & Collaborations", name: "ETH Zurich — Advanced Power Semiconductor Laboratory", location: "Zurich, Switzerland", url: "https://aps.ee.ethz.ch/", source: "sweep",
reason: "Prof. Ulrike Grossner's group published 2025 work on defect formation in heavy-ion-degraded SiC power MOSFETs — a natural bridge between the WBG-device and rad-hardness divisions." },
{ division: "Research & Collaborations", name: "Vanderbilt University — Institute for Space and Defense Electronics", location: "Nashville, Tennessee, USA", url: "https://www.vanderbilt.edu/isde/", source: "sweep",
{ category: "Research & Collaborations", name: "ETH Zurich — Advanced Power Semiconductor Laboratory", location: "Zurich, Switzerland", url: "https://aps.ee.ethz.ch/", source: "sweep",
reason: "Prof. Ulrike Grossner's group published 2025 work on defect formation in heavy-ion-degraded SiC power MOSFETs — a natural bridge between the WBG-device and rad-hardness categories." },
{ category: "Research & Collaborations", name: "Vanderbilt University — Institute for Space and Defense Electronics", location: "Nashville, Tennessee, USA", url: "https://www.vanderbilt.edu/isde/", source: "sweep",
reason: "Schrimpf/Fleetwood group has a long DTRA/ONR-funded track record studying radiation effects in GaN/SiC materials and devices — a strong potential co-authorship partner." },
{ division: "Research & Collaborations", name: "University of Warwick — PEATER group", location: "Coventry, UK", url: "https://warwick.ac.uk/fac/sci/eng/research/grouplist/electricalpower/peater/", source: "sweep",
{ category: "Research & Collaborations", name: "University of Warwick — PEATER group", location: "Coventry, UK", url: "https://warwick.ac.uk/fac/sci/eng/research/grouplist/electricalpower/peater/", source: "sweep",
reason: "Prof. Philip Mawby's 20+ year, ~25-researcher group is a major UK academic center for SiC power device/materials research that could want defect/epitaxy X-ray characterization support." },
{ division: "Research & Collaborations", name: "NASA Goddard Space Flight Center — NEPP Program", location: "Greenbelt, Maryland, USA", url: "https://nepp.nasa.gov/", source: "sweep",
{ category: "Research & Collaborations", name: "NASA Goddard Space Flight Center — NEPP Program", location: "Greenbelt, Maryland, USA", url: "https://nepp.nasa.gov/", source: "sweep",
reason: "Runs heavy-ion/TID radiation qualification studies on SiC/GaN power devices for spaceflight. A government research program, not a company — engagement would follow a different channel than a commercial prospect." },
{ division: "Research & Collaborations", name: "Nagoya University — Center for Integrated Research of Future Electronics", location: "Nagoya, Japan", url: "https://imass.nagoya-u.ac.jp/en/organization/cirfe/", source: "sweep",
{ category: "Research & Collaborations", name: "Nagoya University — Center for Integrated Research of Future Electronics", location: "Nagoya, Japan", url: "https://imass.nagoya-u.ac.jp/en/organization/cirfe/", source: "sweep",
reason: "Active in X-ray topography defect analysis of GaN substrates, appearing in recent (2026) published work on SiC/GaN crystal defect characterization — a plausible co-authorship/joint-beamtime partner for the APAC region." },
{ division: "Research & Collaborations", name: "Linköping University — C3NiT-Janzén Center", location: "Linköping, Sweden", url: "https://c3nit.se/", source: "sweep",
{ category: "Research & Collaborations", name: "Linköping University — C3NiT-Janzén Center", location: "Linköping, Sweden", url: "https://c3nit.se/", source: "sweep",
reason: "VINNOVA-funded Center for III-Nitride Technology (Erik Janzén group), deep publication record on GaN/SiC materials defects and epitaxy, with direct industry ties to SweGaN (already listed under Semiconductor Materials & Substrates) and to Ericsson/Saab." },
{ division: "Research & Collaborations", name: "Chalmers University of Technology", location: "Gothenburg, Sweden", url: "https://www.chalmers.se/en/", source: "sweep",
{ category: "Research & Collaborations", name: "Chalmers University of Technology", location: "Gothenburg, Sweden", url: "https://www.chalmers.se/en/", source: "sweep",
reason: "Distinct from Linköping — collaborates with SweGaN, Ericsson and Saab on GaN power-amplifier work, most recently a 2025 6G GaN project." },
{ division: "Research & Collaborations", name: "Fraunhofer IISB", location: "Erlangen, Germany", url: "https://www.iisb.fraunhofer.de/", source: "sweep",
{ category: "Research & Collaborations", name: "Fraunhofer IISB", location: "Erlangen, Germany", url: "https://www.iisb.fraunhofer.de/", source: "sweep",
reason: "Research institute performing full-wafer-scale X-ray topography defect mapping of SiC substrates/epilayers up to 200mm, plus device fabrication/characterization on a qualified 150mm SiC line — a very concrete fit, and geographically close to DESY." },
{ division: "Research & Collaborations", name: "ESRF — Rocking-Curve Imaging group", location: "Grenoble, France", url: "https://www.esrf.fr/home/Industry/industry-news/content-news/esrf-news-list/semiconductor-defect-imaging.html", source: "sweep",
{ category: "Research & Collaborations", name: "ESRF — Rocking-Curve Imaging group", location: "Grenoble, France", url: "https://www.esrf.fr/home/Industry/industry-news/content-news/esrf-news-list/semiconductor-defect-imaging.html", source: "sweep",
reason: "A peer synchrotron facility (not a customer) that developed rocking-curve imaging specifically for SiC/GaN defect imaging and has published industry-facing material on it — useful as a model/comparator or potential collaborator contact." }
];
var PROSPECT_METHODOLOGY_INTRO = "Methodology / Verification Note — two rounds, 2026-08-22:";
var PROSPECT_METHODOLOGY = [
"Round 1: broad first-pass worldwide web-research sweep, cross-checking each entry's HQ across at least two independent sources (company site plus trade press, directory, or government source) where possible.",
"Merged with Peter's Phase 1 Contact List (25 entries) the same day — his two device-side categories (Power Electronics (Devices) and WBG Device Manufacturer) kept separate rather than combined, plus 2 new divisions this sweep surfaced that his list didn't have (Semiconductor Materials & Substrates, Research & Collaborations).",
"Merged with Peter's Phase 1 Contact List (25 entries) the same day — his two device-side categories (Power Electronics (Devices) and WBG Device Manufacturer) kept separate rather than combined, plus 2 new categories this sweep surfaced that his list didn't have (Semiconductor Materials & Substrates, Research & Collaborations).",
"Round 2: gap-filling pass, explicitly told what Round 1 + Peter's list already covered so it wouldn't re-find the same names. Caught one near-miss (Reltech Limited resurfaced in a Device Testing search, excluded as a duplicate).",
"Round 2 pushed hardest on Power Electronics (Devices) — Round 1 had only independently found 4 of Peter's 12 established players there. Added 5 more (Mitsubishi Electric, Fuji Electric, Nexperia, Semikron Danfoss, Microchip). The original under-coverage looks like a query-phrasing issue (searches for \"top SiC/GaN power device companies\" underweight Japanese/German majors) rather than true scarcity of targets — worth the same treatment for other divisions in a future round.",
"Round 2 pushed hardest on Power Electronics (Devices) — Round 1 had only independently found 4 of Peter's 12 established players there. Added 5 more (Mitsubishi Electric, Fuji Electric, Nexperia, Semikron Danfoss, Microchip). The original under-coverage looks like a query-phrasing issue (searches for \"top SiC/GaN power device companies\" underweight Japanese/German majors) rather than true scarcity of targets — worth the same treatment for other categories in a future round.",
"Research & Collaborations already had strong US/UK coverage (Stony Brook, Vanderbilt, Warwick); Round 2 added Japan (Nagoya) and 2 more EU institutions (Linköping, Chalmers, Fraunhofer IISB), plus flagged ESRF itself as a potential facility-level collaborator, not only a university group.",
"73 total entries. Several are corporate subsidiaries of larger parents rather than fully independent companies (GeneSiC/Navitas, Powdec/Sanken, UnitedSiC-Qorvo, GaN Systems/Renesas, Transphorm/Infineon) — flagged per entry so outreach can target the subsidiary's technical team directly or route through the parent's BD channel.",
"One candidate (Littelfuse, Power Electronics (Devices)) was found but excluded — only a single trade-show mention, evidence too thin to include at the same confidence as the rest.",
@@ -1300,24 +1300,24 @@ function renderProspectScout() {
container.appendChild(empty);
return;
}
var byDivision = {};
var byCategory = {};
var order = [];
PROSPECT_RESULTS.forEach(function (r) {
if (!byDivision[r.division]) { byDivision[r.division] = []; order.push(r.division); }
byDivision[r.division].push(r);
if (!byCategory[r.category]) { byCategory[r.category] = []; order.push(r.category); }
byCategory[r.category].push(r);
});
var SOURCE_LABEL = { peter: "Peter's list", sweep: "This sweep", both: "Peter's list + sweep" };
var SOURCE_COLOR = { peter: "var(--amber)", sweep: "var(--green)", both: "var(--navy)" };
order.forEach(function (div) {
order.forEach(function (cat) {
var panel = document.createElement('div');
panel.className = 'panel mt24';
var title = document.createElement('div');
title.className = 'panel-title';
title.textContent = div + ' (' + byDivision[div].length + ')';
title.textContent = cat + ' (' + byCategory[cat].length + ')';
panel.appendChild(title);
var grid = document.createElement('div');
grid.className = 'client-grid';
byDivision[div].forEach(function (c) {
byCategory[cat].forEach(function (c) {
var card = document.createElement('div');
card.className = 'client-card';
var hasTopRow = c.source || c.correction;
prospect_scout.json
+74 -74
View File
@@ -2,7 +2,7 @@
"generated_from": "market-intelligence/index.html Prospect Scout tab",
"generated_note": "Company/institution listing with website links, ready for CEO and contact-person enrichment. Name, location, website, source, and reason are populated from two research sweeps + Peter's Phase 1 Contact List; ceo/contact_person/contact_role/contact_email/contact_linkedin/notes are placeholders to fill in next.",
"total_entries": 73,
"divisions": [
"categories": [
"Semiconductor Materials & Substrates (GaN/SiC)",
"Power Electronics (Devices)",
"WBG Device Manufacturer",
@@ -12,7 +12,7 @@
],
"entries": [
{
"division": "Semiconductor Materials & Substrates (GaN/SiC)",
"category": "Semiconductor Materials & Substrates (GaN/SiC)",
"name": "SweGaN AB",
"location": "Linköping, Sweden",
"website": "https://swegan.se",
@@ -26,7 +26,7 @@
"notes": ""
},
{
"division": "Semiconductor Materials & Substrates (GaN/SiC)",
"category": "Semiconductor Materials & Substrates (GaN/SiC)",
"name": "SK Siltron CSS",
"location": "Auburn, Michigan, USA",
"website": "https://sksiltroncss.com",
@@ -40,7 +40,7 @@
"notes": ""
},
{
"division": "Semiconductor Materials & Substrates (GaN/SiC)",
"category": "Semiconductor Materials & Substrates (GaN/SiC)",
"name": "TanKeBlue Semiconductor Co., Ltd.",
"location": "Beijing, China",
"website": "https://en.tankeblue.com",
@@ -54,7 +54,7 @@
"notes": ""
},
{
"division": "Semiconductor Materials & Substrates (GaN/SiC)",
"category": "Semiconductor Materials & Substrates (GaN/SiC)",
"name": "SICC Co., Ltd.",
"location": "Jinan, Shandong, China",
"website": "https://sicc.cc",
@@ -68,7 +68,7 @@
"notes": ""
},
{
"division": "Semiconductor Materials & Substrates (GaN/SiC)",
"category": "Semiconductor Materials & Substrates (GaN/SiC)",
"name": "Resonac (formerly Showa Denko)",
"location": "Tokyo, Japan",
"website": "https://resonac.com",
@@ -82,7 +82,7 @@
"notes": ""
},
{
"division": "Semiconductor Materials & Substrates (GaN/SiC)",
"category": "Semiconductor Materials & Substrates (GaN/SiC)",
"name": "Coherent Corp.",
"location": "Saxonburg, Pennsylvania, USA",
"website": "https://coherent.com",
@@ -96,7 +96,7 @@
"notes": ""
},
{
"division": "Semiconductor Materials & Substrates (GaN/SiC)",
"category": "Semiconductor Materials & Substrates (GaN/SiC)",
"name": "Soitec",
"location": "Bernin, France",
"website": "https://soitec.com",
@@ -110,7 +110,7 @@
"notes": ""
},
{
"division": "Semiconductor Materials & Substrates (GaN/SiC)",
"category": "Semiconductor Materials & Substrates (GaN/SiC)",
"name": "TekSiC AB",
"location": "Linköping, Sweden",
"website": "https://teksic.com",
@@ -124,7 +124,7 @@
"notes": ""
},
{
"division": "Semiconductor Materials & Substrates (GaN/SiC)",
"category": "Semiconductor Materials & Substrates (GaN/SiC)",
"name": "Kyma Technologies",
"location": "Raleigh, North Carolina, USA",
"website": "https://kymatech.com",
@@ -138,7 +138,7 @@
"notes": ""
},
{
"division": "Power Electronics (Devices)",
"category": "Power Electronics (Devices)",
"name": "Infineon Technologies AG",
"location": "Neubiberg, Germany",
"website": "https://infineon.com",
@@ -152,7 +152,7 @@
"notes": ""
},
{
"division": "Power Electronics (Devices)",
"category": "Power Electronics (Devices)",
"name": "Wolfspeed, Inc.",
"location": "Durham, North Carolina, USA",
"website": "https://wolfspeed.com",
@@ -166,7 +166,7 @@
"notes": ""
},
{
"division": "Power Electronics (Devices)",
"category": "Power Electronics (Devices)",
"name": "onsemi",
"location": "DE / US / Asia / Canada",
"website": "https://www.onsemi.com",
@@ -180,7 +180,7 @@
"notes": ""
},
{
"division": "Power Electronics (Devices)",
"category": "Power Electronics (Devices)",
"name": "STMicroelectronics",
"location": "CH / FR / IT",
"website": "https://www.st.com",
@@ -194,7 +194,7 @@
"notes": ""
},
{
"division": "Power Electronics (Devices)",
"category": "Power Electronics (Devices)",
"name": "ROHM",
"location": "Japan",
"website": "https://www.rohm.com",
@@ -208,7 +208,7 @@
"notes": ""
},
{
"division": "Power Electronics (Devices)",
"category": "Power Electronics (Devices)",
"name": "Renesas",
"location": "Japan",
"website": "https://www.renesas.com",
@@ -222,7 +222,7 @@
"notes": ""
},
{
"division": "Power Electronics (Devices)",
"category": "Power Electronics (Devices)",
"name": "Power Integrations",
"location": "USA",
"website": "https://www.power.com",
@@ -236,7 +236,7 @@
"notes": ""
},
{
"division": "Power Electronics (Devices)",
"category": "Power Electronics (Devices)",
"name": "Navitas Semiconductor",
"location": "Torrance, California, USA",
"website": "https://navitassemi.com",
@@ -250,7 +250,7 @@
"notes": ""
},
{
"division": "Power Electronics (Devices)",
"category": "Power Electronics (Devices)",
"name": "EPC (Efficient Power Conversion)",
"location": "USA",
"website": "https://www.epc-co.com",
@@ -264,7 +264,7 @@
"notes": ""
},
{
"division": "Power Electronics (Devices)",
"category": "Power Electronics (Devices)",
"name": "Innoscience",
"location": "China",
"website": "https://www.innoscience.com",
@@ -278,7 +278,7 @@
"notes": ""
},
{
"division": "Power Electronics (Devices)",
"category": "Power Electronics (Devices)",
"name": "GaN Systems Inc.",
"location": "Ottawa, Ontario, Canada",
"website": "https://www.gansystems.com",
@@ -292,7 +292,7 @@
"notes": "Edited 2026-08-22: an earlier pass had this backwards, saying GaN Systems was acquired by Renesas. Verified via web search — Infineon acquired GaN Systems (2023); Renesas acquired Transphorm instead."
},
{
"division": "Power Electronics (Devices)",
"category": "Power Electronics (Devices)",
"name": "Vishay Intertechnology",
"location": "USA",
"website": "https://www.vishay.com",
@@ -306,7 +306,7 @@
"notes": ""
},
{
"division": "Power Electronics (Devices)",
"category": "Power Electronics (Devices)",
"name": "Mitsubishi Electric",
"location": "Tokyo, Japan",
"website": "https://www.mitsubishielectric.com",
@@ -320,7 +320,7 @@
"notes": ""
},
{
"division": "Power Electronics (Devices)",
"category": "Power Electronics (Devices)",
"name": "Fuji Electric",
"location": "Tokyo, Japan",
"website": "https://www.fujielectric.com",
@@ -334,7 +334,7 @@
"notes": ""
},
{
"division": "Power Electronics (Devices)",
"category": "Power Electronics (Devices)",
"name": "Nexperia",
"location": "Nijmegen, Netherlands (WBG fab in Hamburg, Germany)",
"website": "https://nexperia.com",
@@ -348,7 +348,7 @@
"notes": ""
},
{
"division": "Power Electronics (Devices)",
"category": "Power Electronics (Devices)",
"name": "Semikron Danfoss",
"location": "Nuremberg, Germany / Denmark",
"website": "https://semikron-danfoss.com",
@@ -362,7 +362,7 @@
"notes": ""
},
{
"division": "Power Electronics (Devices)",
"category": "Power Electronics (Devices)",
"name": "Microchip Technology",
"location": "Chandler, Arizona, USA",
"website": "https://www.microchip.com",
@@ -376,7 +376,7 @@
"notes": ""
},
{
"division": "WBG Device Manufacturer",
"category": "WBG Device Manufacturer",
"name": "Cissoid",
"location": "Belgium",
"website": "https://www.cissoid.com",
@@ -390,7 +390,7 @@
"notes": ""
},
{
"division": "WBG Device Manufacturer",
"category": "WBG Device Manufacturer",
"name": "WeEn Semiconductors",
"location": "China / Netherlands",
"website": "https://www.ween-semi.com",
@@ -404,7 +404,7 @@
"notes": ""
},
{
"division": "WBG Device Manufacturer",
"category": "WBG Device Manufacturer",
"name": "Solitron Devices",
"location": "USA",
"website": "https://solitrondevices.com",
@@ -418,7 +418,7 @@
"notes": ""
},
{
"division": "WBG Device Manufacturer",
"category": "WBG Device Manufacturer",
"name": "NexGen Power Systems",
"location": "USA",
"website": "https://www.nexgenpowersystems.com",
@@ -432,7 +432,7 @@
"notes": ""
},
{
"division": "WBG Device Manufacturer",
"category": "WBG Device Manufacturer",
"name": "GaNPower International",
"location": "Canada",
"website": "https://iganpower.com",
@@ -446,7 +446,7 @@
"notes": ""
},
{
"division": "WBG Device Manufacturer",
"category": "WBG Device Manufacturer",
"name": "Toshiba Electronic Devices",
"location": "Japan",
"website": "https://toshiba.semicon-storage.com",
@@ -460,7 +460,7 @@
"notes": ""
},
{
"division": "WBG Device Manufacturer",
"category": "WBG Device Manufacturer",
"name": "X-FAB Silicon Foundries SE",
"location": "Erfurt, Germany (registered seat Tessenderlo, Belgium)",
"website": "https://xfab.com",
@@ -474,7 +474,7 @@
"notes": ""
},
{
"division": "WBG Device Manufacturer",
"category": "WBG Device Manufacturer",
"name": "Transphorm Inc.",
"location": "Goleta, California, USA",
"website": "https://www.transphormusa.com",
@@ -488,7 +488,7 @@
"notes": "Edited 2026-08-22: an earlier pass had this backwards, saying Transphorm was acquired by Infineon. Verified via web search — Renesas acquired Transphorm (completed June 2024); Infineon acquired GaN Systems instead."
},
{
"division": "WBG Device Manufacturer",
"category": "WBG Device Manufacturer",
"name": "GeneSiC Semiconductor",
"location": "Dulles, Virginia, USA",
"website": "https://genesic.com",
@@ -502,7 +502,7 @@
"notes": ""
},
{
"division": "WBG Device Manufacturer",
"category": "WBG Device Manufacturer",
"name": "Qorvo Power Device Solutions (ex-United Silicon Carbide/UnitedSiC)",
"location": "Princeton, New Jersey, USA",
"website": "https://www.qorvo.com",
@@ -516,7 +516,7 @@
"notes": ""
},
{
"division": "WBG Device Manufacturer",
"category": "WBG Device Manufacturer",
"name": "Powdec K.K.",
"location": "Oyama City, Tochigi, Japan",
"website": "https://www.powdec.co.jp/english/",
@@ -530,7 +530,7 @@
"notes": ""
},
{
"division": "WBG Device Manufacturer",
"category": "WBG Device Manufacturer",
"name": "STARPOWER Semiconductor",
"location": "Jiaxing, Zhejiang, China",
"website": "https://www.powersemi.com",
@@ -544,7 +544,7 @@
"notes": ""
},
{
"division": "Device Testing",
"category": "Device Testing",
"name": "Applied Technical Services (ATS)",
"location": "USA",
"website": "https://atslab.com",
@@ -558,7 +558,7 @@
"notes": ""
},
{
"division": "Device Testing",
"category": "Device Testing",
"name": "AAA Engineering & Test Lab",
"location": "USA",
"website": "https://aaactl.com",
@@ -572,7 +572,7 @@
"notes": ""
},
{
"division": "Device Testing",
"category": "Device Testing",
"name": "Radiation Test Solutions (RTS)",
"location": "Colorado Springs, Colorado, USA",
"website": "https://radiationtestsolutions.com",
@@ -586,7 +586,7 @@
"notes": ""
},
{
"division": "Device Testing",
"category": "Device Testing",
"name": "BEAMIDE",
"location": "EU",
"website": "https://www.beamide.com",
@@ -600,7 +600,7 @@
"notes": ""
},
{
"division": "Device Testing",
"category": "Device Testing",
"name": "Reltech Limited",
"location": "Cambridgeshire, UK",
"website": "https://reltech.co.uk",
@@ -614,7 +614,7 @@
"notes": ""
},
{
"division": "Device Testing",
"category": "Device Testing",
"name": "Integra Technologies",
"location": "Wichita, Kansas, USA",
"website": "https://integra-tech.com",
@@ -628,7 +628,7 @@
"notes": ""
},
{
"division": "Device Testing",
"category": "Device Testing",
"name": "SGS SA",
"location": "Geneva, Switzerland",
"website": "https://sgs.com",
@@ -642,7 +642,7 @@
"notes": ""
},
{
"division": "Device Testing",
"category": "Device Testing",
"name": "PCsemic (Chongqing Pingchuang Institute of Semiconductors Co., Ltd.)",
"location": "Chongqing, China",
"website": "https://pcsemic.com",
@@ -656,7 +656,7 @@
"notes": ""
},
{
"division": "Device Testing",
"category": "Device Testing",
"name": "Presto Engineering",
"location": "Caen, France",
"website": "https://www.presto-eng.com",
@@ -670,7 +670,7 @@
"notes": ""
},
{
"division": "Device Testing",
"category": "Device Testing",
"name": "Aehr Test Systems",
"location": "Fremont, California, USA",
"website": "https://www.aehr.com",
@@ -684,7 +684,7 @@
"notes": ""
},
{
"division": "Device Testing",
"category": "Device Testing",
"name": "Ansys Reliability Engineering Services (formerly DfR Solutions)",
"location": "College Park, Maryland, USA",
"website": "https://www.ansys.com",
@@ -698,7 +698,7 @@
"notes": ""
},
{
"division": "Device Testing",
"category": "Device Testing",
"name": "EAG Laboratories",
"location": "Multiple US/global sites",
"website": "https://www.eag.com",
@@ -712,7 +712,7 @@
"notes": ""
},
{
"division": "Device Testing",
"category": "Device Testing",
"name": "Element Materials Technology (formerly NTS)",
"location": "London, UK (global sites)",
"website": "https://www.element.com",
@@ -726,7 +726,7 @@
"notes": ""
},
{
"division": "Radiation Hardness",
"category": "Radiation Hardness",
"name": "RADNEXT (CERN-coordinated)",
"location": "EU",
"website": "https://radnext.web.cern.ch",
@@ -740,7 +740,7 @@
"notes": ""
},
{
"division": "Radiation Hardness",
"category": "Radiation Hardness",
"name": "ESA ESTEC / TEC-QEC",
"location": "Netherlands",
"website": "https://www.esa.int/Enabling_Support/Space_Engineering_Technology/Radiation_a_testing_challenge",
@@ -754,7 +754,7 @@
"notes": ""
},
{
"division": "Radiation Hardness",
"category": "Radiation Hardness",
"name": "Paul Scherrer Institute (PSI)",
"location": "Switzerland",
"website": "https://www.psi.ch/en",
@@ -768,7 +768,7 @@
"notes": ""
},
{
"division": "Radiation Hardness",
"category": "Radiation Hardness",
"name": "BAE Systems — Space Systems",
"location": "Manassas, Virginia, USA (global HQ Farnborough, UK)",
"website": "https://baesystems.com",
@@ -782,7 +782,7 @@
"notes": ""
},
{
"division": "Radiation Hardness",
"category": "Radiation Hardness",
"name": "Teledyne e2v",
"location": "Chelmsford, Essex, UK",
"website": "https://teledyne-e2v.com",
@@ -796,7 +796,7 @@
"notes": ""
},
{
"division": "Radiation Hardness",
"category": "Radiation Hardness",
"name": "VORAGO Technologies",
"location": "Austin, Texas, USA",
"website": "https://voragotech.com",
@@ -810,7 +810,7 @@
"notes": ""
},
{
"division": "Radiation Hardness",
"category": "Radiation Hardness",
"name": "Heavy Ion Facility, Université catholique de Louvain (UCLouvain)",
"location": "Louvain-la-Neuve, Belgium",
"website": "https://www.uclouvain.be/en/research-institutes/irmp/heavy-ion-facility-hif",
@@ -824,7 +824,7 @@
"notes": ""
},
{
"division": "Radiation Hardness",
"category": "Radiation Hardness",
"name": "TTM Technologies",
"location": "Costa Mesa, California, USA",
"website": "https://www.ttm.com",
@@ -838,7 +838,7 @@
"notes": ""
},
{
"division": "Radiation Hardness",
"category": "Radiation Hardness",
"name": "Data Device Corporation (DDC)",
"location": "Bohemia, New York, USA (Center of Excellence in Poway, CA)",
"website": "https://www.ddc-web.com",
@@ -852,7 +852,7 @@
"notes": ""
},
{
"division": "Radiation Hardness",
"category": "Radiation Hardness",
"name": "Frontgrade Gaisler",
"location": "Gothenburg, Sweden",
"website": "https://www.gaisler.com",
@@ -866,7 +866,7 @@
"notes": ""
},
{
"division": "Radiation Hardness",
"category": "Radiation Hardness",
"name": "RADEF (Radiation Effects Facility), University of Jyväskylä",
"location": "Jyväskylä, Finland",
"website": "https://www.jyu.fi",
@@ -880,7 +880,7 @@
"notes": ""
},
{
"division": "Radiation Hardness",
"category": "Radiation Hardness",
"name": "Microchip Technology (rad-hard/rad-tolerant line)",
"location": "Chandler, Arizona, USA",
"website": "https://www.microchip.com",
@@ -894,7 +894,7 @@
"notes": ""
},
{
"division": "Research & Collaborations",
"category": "Research & Collaborations",
"name": "Stony Brook University — Laboratory for Synchrotron X-ray Topography",
"location": "Stony Brook, New York, USA",
"website": "https://you.stonybrook.edu/xraycharacterization/",
@@ -908,7 +908,7 @@
"notes": ""
},
{
"division": "Research & Collaborations",
"category": "Research & Collaborations",
"name": "ETH Zurich — Advanced Power Semiconductor Laboratory",
"location": "Zurich, Switzerland",
"website": "https://aps.ee.ethz.ch/",
@@ -922,7 +922,7 @@
"notes": ""
},
{
"division": "Research & Collaborations",
"category": "Research & Collaborations",
"name": "Vanderbilt University — Institute for Space and Defense Electronics",
"location": "Nashville, Tennessee, USA",
"website": "https://www.vanderbilt.edu/isde/",
@@ -936,7 +936,7 @@
"notes": ""
},
{
"division": "Research & Collaborations",
"category": "Research & Collaborations",
"name": "University of Warwick — PEATER group",
"location": "Coventry, UK",
"website": "https://warwick.ac.uk/fac/sci/eng/research/grouplist/electricalpower/peater/",
@@ -950,7 +950,7 @@
"notes": ""
},
{
"division": "Research & Collaborations",
"category": "Research & Collaborations",
"name": "NASA Goddard Space Flight Center — NEPP Program",
"location": "Greenbelt, Maryland, USA",
"website": "https://nepp.nasa.gov/",
@@ -964,7 +964,7 @@
"notes": ""
},
{
"division": "Research & Collaborations",
"category": "Research & Collaborations",
"name": "Nagoya University — Center for Integrated Research of Future Electronics",
"location": "Nagoya, Japan",
"website": "https://imass.nagoya-u.ac.jp/en/organization/cirfe/",
@@ -978,7 +978,7 @@
"notes": ""
},
{
"division": "Research & Collaborations",
"category": "Research & Collaborations",
"name": "Linköping University — C3NiT-Janzén Center",
"location": "Linköping, Sweden",
"website": "https://c3nit.se/",
@@ -992,7 +992,7 @@
"notes": ""
},
{
"division": "Research & Collaborations",
"category": "Research & Collaborations",
"name": "Chalmers University of Technology",
"location": "Gothenburg, Sweden",
"website": "https://www.chalmers.se/en/",
@@ -1006,7 +1006,7 @@
"notes": ""
},
{
"division": "Research & Collaborations",
"category": "Research & Collaborations",
"name": "Fraunhofer IISB",
"location": "Erlangen, Germany",
"website": "https://www.iisb.fraunhofer.de/",
@@ -1020,7 +1020,7 @@
"notes": ""
},
{
"division": "Research & Collaborations",
"category": "Research & Collaborations",
"name": "ESRF — Rocking-Curve Imaging group",
"location": "Grenoble, France",
"website": "https://www.esrf.fr/home/Industry/industry-news/content-news/esrf-news-list/semiconductor-defect-imaging.html",