Round 2 Prospect Scout sweep: 29 new entries, 73 total
Gap-filling sweep informed by the Peter-list cross-check: told the subagent exactly what Round 1 + Peter's Phase 1 Contact List already covered so it wouldn't re-find the same names, and pushed hardest on Power Electronics (Devices) where Round 1 had only independently found 4 of Peter's 12 established players. Added across all 6 divisions: 5 materials/substrate makers (Resonac, Coherent, Soitec, TekSiC, Kyma), 5 established power electronics manufacturers (Mitsubishi Electric, Fuji Electric, Nexperia, Semikron Danfoss, Microchip), 4 niche WBG device makers (GeneSiC, Qorvo Power Device Solutions, Powdec, STARPOWER), 5 test labs (Presto Engineering, Aehr, Ansys Reliability/DfR, EAG, Element Materials), 5 rad-hard companies/facilities (TTM, DDC, Frontgrade Gaisler, RADEF, Microchip's rad-hard line), and 5 research partners (Nagoya, Linkoping C3NiT, Chalmers, Fraunhofer IISB, ESRF RCI group).
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@@ -1102,6 +1102,16 @@ var PROSPECT_RESULTS = [
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reason: "Self-described pioneer of China's SiC substrate industry, founded 2006. Fit inferred from product line only, not yet confirmed against a specific published beamtime need." },
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{ division: "Semiconductor Materials & Substrates (GaN/SiC)", name: "SICC Co., Ltd.", location: "Jinan, Shandong, China", url: "https://sicc.cc", source: "sweep",
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reason: "SiC crystal-growth manufacturer. Fit inferred from product line only, no independent confirmation of synchrotron use found." },
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{ division: "Semiconductor Materials & Substrates (GaN/SiC)", name: "Resonac (formerly Showa Denko)", location: "Tokyo, Japan", url: "https://resonac.com", source: "sweep",
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reason: "World's largest independent supplier of SiC epitaxial wafers; expanding 150mm capacity to ~50,000 wafers/month and starting 200mm mass production, partnering with Soitec on 200mm bonded SiC substrates." },
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{ division: "Semiconductor Materials & Substrates (GaN/SiC)", name: "Coherent Corp.", location: "Saxonburg, Pennsylvania, USA", url: "https://coherent.com", source: "sweep",
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reason: "Producer of SiC substrates/epitaxy up to 200mm diameter for power electronics (formerly II-VI Advanced Materials)." },
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{ division: "Semiconductor Materials & Substrates (GaN/SiC)", name: "Soitec", location: "Bernin, France", url: "https://soitec.com", source: "sweep",
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reason: "Independent engineered-substrate specialist; its SmartSiC bonded-SiC technology is adopted by STMicroelectronics for future 200mm substrates." },
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{ division: "Semiconductor Materials & Substrates (GaN/SiC)", name: "TekSiC AB", location: "Linköping, Sweden", url: "https://teksic.com", source: "sweep",
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reason: "Founded 2021, building Europe's first domestic semi-insulating SiC wafer supply for GaN RF/defense/satcom, using a proprietary PVT growth reactor. Early-stage — customer-validation wafers not expected until mid-2027, flag as pre-commercial." },
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{ division: "Semiconductor Materials & Substrates (GaN/SiC)", name: "Kyma Technologies", location: "Raleigh, North Carolina, USA", url: "https://kymatech.com", source: "sweep",
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reason: "US supplier of bulk GaN substrates; partnership with Qromis demonstrated 200mm GaN-on-QST engineered substrates." },
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{ division: "Power Electronics (Devices)", name: "Infineon Technologies AG", location: "Neubiberg, Germany", url: "https://infineon.com", source: "both",
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reason: "Peter's Phase 1 list + this sweep. Leading supplier of SiC MOSFETs and GaN power ICs at scale; large-volume production makes epitaxial/interface defect characterization commercially relevant." },
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@@ -1127,6 +1137,16 @@ var PROSPECT_RESULTS = [
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reason: "Peter's Phase 1 list + this sweep. Fabless GaN power switching semiconductor developer, acquired by Renesas in 2023 — Peter's sheet lists its website as infineon.com, worth double-checking whether that's a transcription artifact or reflects a different current status. Flagged as uncertain whether it still operates as an independent prospect entity." },
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{ division: "Power Electronics (Devices)", name: "Vishay Intertechnology", location: "USA", url: "https://www.vishay.com", source: "peter",
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reason: "Peter's Phase 1 list. Power discrete semiconductor manufacturer." },
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{ division: "Power Electronics (Devices)", name: "Mitsubishi Electric", location: "Tokyo, Japan", url: "https://www.mitsubishielectric.com", source: "sweep",
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reason: "Long-standing SiC power module producer (first all-SiC module for Shinkansen trains, 2015); new 200mm SiC wafer fab completed in Kumamoto, Oct 2025; states a goal to be #1 power semiconductor maker by 2030." },
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{ division: "Power Electronics (Devices)", name: "Fuji Electric", location: "Tokyo, Japan", url: "https://www.fujielectric.com", source: "sweep",
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reason: "Established SiC device/module manufacturer (hybrid Si-IGBT/SiC and full-SiC modules); active EV partnership with Denso on SiC." },
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{ division: "Power Electronics (Devices)", name: "Nexperia", location: "Nijmegen, Netherlands (WBG fab in Hamburg, Germany)", url: "https://nexperia.com", source: "sweep",
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reason: "GaN FET (CCPAK) and SiC MOSFET lines, including devices co-developed with Mitsubishi Electric; $200M investment announced to expand WBG production at its Hamburg fab — notably close to TXproducts' DESY Hamburg beamtime connection." },
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{ division: "Power Electronics (Devices)", name: "Semikron Danfoss", location: "Nuremberg, Germany / Denmark", url: "https://semikron-danfoss.com", source: "sweep",
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reason: "Largest chip-independent power module manufacturer, partnered with all major SiC chip suppliers; dedicated SiC MOSFET/hybrid module lines up to 600A/1700V." },
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{ division: "Power Electronics (Devices)", name: "Microchip Technology", location: "Chandler, Arizona, USA", url: "https://www.microchip.com", source: "sweep",
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reason: "Scalable GaN power IC and SiC discrete/module portfolio for industrial, automotive, and aerospace/defense. Also has a distinct rad-hard/rad-tolerant space product line, listed separately under Radiation Hardness." },
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{ division: "WBG Device Manufacturer", name: "Cissoid", location: "Belgium", source: "peter",
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reason: "Peter's Phase 1 list. SiC/GaN devices for extreme-temperature applications." },
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@@ -1144,6 +1164,14 @@ var PROSPECT_RESULTS = [
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reason: "Self-described first pure-play foundry offering SiC and GaN process technologies; as a foundry serving many fabless WBG designers, defect/process characterization services are directly relevant." },
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{ division: "WBG Device Manufacturer", name: "Transphorm Inc.", location: "Goleta, California, USA", source: "sweep",
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reason: "GaN FET maker for high-voltage power conversion, now part of Infineon after acquisition — independent prospect status uncertain, confirm before outreach." },
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{ division: "WBG Device Manufacturer", name: "GeneSiC Semiconductor", location: "Dulles, Virginia, USA", url: "https://genesic.com", source: "sweep",
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reason: "SiC pioneer (founded 2004) making SiC rectifiers, transistors, and thyristors; acquired by Navitas Semiconductor in 2022 but still operates as a distinct SiC device brand/line." },
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{ division: "WBG Device Manufacturer", name: "Qorvo Power Device Solutions (ex-United Silicon Carbide/UnitedSiC)", location: "Princeton, New Jersey, USA", url: "https://www.qorvo.com", source: "sweep",
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reason: "Specialist SiC FET/JFET/Schottky diode portfolio (80+ devices), including 750V/5.9mΩ Gen4 SiC FETs; acquired by Qorvo in 2021, operates within Qorvo's Infrastructure & Defense Products unit as a distinct SiC line." },
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{ division: "WBG Device Manufacturer", name: "Powdec K.K.", location: "Oyama City, Tochigi, Japan", source: "sweep",
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reason: "Specialist in GaN-on-GaN epitaxial wafers and devices, holder of PSJ-GaN (Polarization Super Junction GaN) patents. Acquired by Sanken Electric in March 2025." },
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{ division: "WBG Device Manufacturer", name: "STARPOWER Semiconductor", location: "Jiaxing, Zhejiang, China", url: "https://www.powersemi.com", source: "sweep",
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reason: "IGBT/SiC module manufacturer, ranked #5 globally in IGBT modules (2022, #1 among Chinese firms), Shanghai-listed (603290), with R&D/HQ presence in Switzerland and Germany." },
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{ division: "Device Testing", name: "Applied Technical Services (ATS)", location: "USA", source: "peter",
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reason: "Peter's Phase 1 list. Reliability and radiation testing for aerospace semiconductors." },
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@@ -1161,6 +1189,16 @@ var PROSPECT_RESULTS = [
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reason: "Global third-party AEC-Q101/AEC-Q102 semiconductor reliability/qualification testing, including automotive-grade discretes and power devices." },
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{ division: "Device Testing", name: "PCsemic (Chongqing Pingchuang Institute of Semiconductors Co., Ltd.)", location: "Chongqing, China", url: "https://pcsemic.com", source: "sweep",
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reason: "Operates a dedicated Power Device Reliability Laboratory (HTRB/HTGB chip-level, H3TRB/TC/HAST package-level). Independence from single device makers not yet confirmed." },
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{ division: "Device Testing", name: "Presto Engineering", location: "Caen, France", url: "https://www.presto-eng.com", source: "sweep",
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reason: "Independent semiconductor test/failure-analysis/qualification house on a former NXP facility; >€50M invested across 4 test floors, explicit die-, package-, and board-level qualification services." },
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{ division: "Device Testing", name: "Aehr Test Systems", location: "Fremont, California, USA", url: "https://www.aehr.com", source: "sweep",
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reason: "States it is the leader in wafer-level burn-in specifically for SiC and GaN devices — directly on-topic for WBG device qualification, feeding failure-mode data back to fabs/designers." },
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{ division: "Device Testing", name: "Ansys Reliability Engineering Services (formerly DfR Solutions)", location: "College Park, Maryland, USA", url: "https://www.ansys.com", source: "sweep",
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reason: "Independent reliability lab (20,000 sq ft facility): accelerated life testing, failure analysis, component reliability and materials characterization." },
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{ division: "Device Testing", name: "EAG Laboratories", location: "Multiple US/global sites", url: "https://www.eag.com", source: "sweep",
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reason: "Independent reliability/qualification lab offering HTOL, thermal shock, preconditioning, THB, and HAST testing services." },
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{ division: "Device Testing", name: "Element Materials Technology (formerly NTS)", location: "London, UK (global sites)", url: "https://www.element.com", source: "sweep",
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reason: "Broad qualification/certification testing services including a defense/space division (Element U.S. Space and Defense); a general provider rather than SiC/GaN-specific, useful as a large umbrella contact." },
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{ division: "Radiation Hardness", name: "RADNEXT (CERN-coordinated)", location: "EU", source: "peter",
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reason: "Peter's Phase 1 list. European irradiation facility network." },
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@@ -1176,6 +1214,16 @@ var PROSPECT_RESULTS = [
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reason: "Rad-hard MCUs/components for space and nuclear environments via a proprietary HARDSIL process; specifics mostly sourced from company material, limited independent confirmation." },
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{ division: "Radiation Hardness", name: "Heavy Ion Facility, Université catholique de Louvain (UCLouvain)", location: "Louvain-la-Neuve, Belgium", source: "sweep",
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reason: "ESA-preferred external single-event-effects test facility (CYCLONE cyclotron); a potential collaborator/co-location partner rather than a paying customer." },
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{ division: "Radiation Hardness", name: "TTM Technologies", location: "Costa Mesa, California, USA", url: "https://www.ttm.com", source: "sweep",
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reason: "Supplier of rad-hard microcircuits to aerospace/space/defense, certified to MIL-PRF-38534 Class H and Class K (space-grade)." },
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{ division: "Radiation Hardness", name: "Data Device Corporation (DDC)", location: "Bohemia, New York, USA (Center of Excellence in Poway, CA)", url: "https://www.ddc-web.com", source: "sweep",
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reason: "Runs a \"Center of Excellence for Radiation Tolerant Microelectronics and Single Board Computers,\" qualified to MIL-PRF-38534/38535." },
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{ division: "Radiation Hardness", name: "Frontgrade Gaisler", location: "Gothenburg, Sweden", url: "https://www.gaisler.com", source: "sweep",
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reason: "Maker of rad-hard LEON-family processors (GR712RC, GR740) flown on hundreds of spacecraft; GR740 designated ESA's \"Next Generation Microprocessor,\" close ESA/industry ties." },
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{ division: "Radiation Hardness", name: "RADEF (Radiation Effects Facility), University of Jyväskylä", location: "Jyväskylä, Finland", url: "https://www.jyu.fi", source: "sweep",
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reason: "ESA-supported European Component Irradiation Facility (since 2005) providing proton/heavy-ion/electron irradiation testing for space electronics, used by ESA, NASA, JAXA, CNES and European industry — a peer facility to the already-listed PSI and UCLouvain sites." },
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{ division: "Radiation Hardness", name: "Microchip Technology (rad-hard/rad-tolerant line)", location: "Chandler, Arizona, USA", url: "https://www.microchip.com", source: "sweep",
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reason: "Same company as the Power Electronics (Devices) entry above, listed here separately for its distinct aerospace rad-hard/rad-tolerant product line — states it offers one of the widest selections of rad-hard/rad-tolerant parts for space." },
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{ division: "Research & Collaborations", name: "Stony Brook University — Laboratory for Synchrotron X-ray Topography", location: "Stony Brook, New York, USA", source: "sweep",
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reason: "PI Michael Dudley publishes synchrotron X-ray topography of GaN and 4H-SiC power-device material (ARPA-E sponsored) — the single most directly on-topic match found in this sweep." },
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@@ -1186,9 +1234,19 @@ var PROSPECT_RESULTS = [
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{ division: "Research & Collaborations", name: "University of Warwick — PEATER group", location: "Coventry, UK", source: "sweep",
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reason: "Prof. Philip Mawby's 20+ year, ~25-researcher group is a major UK academic center for SiC power device/materials research that could want defect/epitaxy X-ray characterization support." },
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{ division: "Research & Collaborations", name: "NASA Goddard Space Flight Center — NEPP Program", location: "Greenbelt, Maryland, USA", source: "sweep",
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reason: "Runs heavy-ion/TID radiation qualification studies on SiC/GaN power devices for spaceflight. A government research program, not a company — engagement would follow a different channel than a commercial prospect." }
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reason: "Runs heavy-ion/TID radiation qualification studies on SiC/GaN power devices for spaceflight. A government research program, not a company — engagement would follow a different channel than a commercial prospect." },
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{ division: "Research & Collaborations", name: "Nagoya University — Center for Integrated Research of Future Electronics", location: "Nagoya, Japan", source: "sweep",
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reason: "Active in X-ray topography defect analysis of GaN substrates, appearing in recent (2026) published work on SiC/GaN crystal defect characterization — a plausible co-authorship/joint-beamtime partner for the APAC region." },
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{ division: "Research & Collaborations", name: "Linköping University — C3NiT-Janzén Center", location: "Linköping, Sweden", source: "sweep",
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reason: "VINNOVA-funded Center for III-Nitride Technology (Erik Janzén group), deep publication record on GaN/SiC materials defects and epitaxy, with direct industry ties to SweGaN (already listed under Semiconductor Materials & Substrates) and to Ericsson/Saab." },
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{ division: "Research & Collaborations", name: "Chalmers University of Technology", location: "Gothenburg, Sweden", source: "sweep",
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reason: "Distinct from Linköping — collaborates with SweGaN, Ericsson and Saab on GaN power-amplifier work, most recently a 2025 6G GaN project." },
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{ division: "Research & Collaborations", name: "Fraunhofer IISB", location: "Erlangen, Germany", source: "sweep",
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reason: "Research institute performing full-wafer-scale X-ray topography defect mapping of SiC substrates/epilayers up to 200mm, plus device fabrication/characterization on a qualified 150mm SiC line — a very concrete fit, and geographically close to DESY." },
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{ division: "Research & Collaborations", name: "ESRF — Rocking-Curve Imaging group", location: "Grenoble, France", source: "sweep",
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reason: "A peer synchrotron facility (not a customer) that developed rocking-curve imaging specifically for SiC/GaN defect imaging and has published industry-facing material on it — useful as a model/comparator or potential collaborator contact." }
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];
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var PROSPECT_METHODOLOGY = "Broad first-pass worldwide sweep (2026-08-22): targeted searches per division, cross-checking each entry's HQ across at least two independent sources (company site plus trade press, directory, or government source) where possible. Not exhaustive — skews toward English-language/Western trade press; several Chinese-manufacturer entries rely more on company-published material than independent confirmation. Merged 2026-08-22 with Peter's Phase 1 Contact List (25 entries) — his two device-side categories kept separate rather than combined, and this sweep's two genuinely new divisions (Semiconductor Materials & Substrates, Research & Collaborations) added alongside. Each card is tagged by where it came from: Peter's list, this sweep, or both. GaN Systems and Transphorm are flagged as recently acquired — confirm they still function as independent prospects before outreach. Treat every entry as a lead requiring direct verification before outreach or budget commitment, not a confirmed relationship.";
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var PROSPECT_METHODOLOGY = "Two rounds (2026-08-22). Round 1: broad first-pass worldwide sweep, merged with Peter's Phase 1 Contact List (25 entries) — his two device-side categories kept separate rather than combined, plus 2 genuinely new divisions (Semiconductor Materials & Substrates, Research & Collaborations) this sweep surfaced that his list didn't have. Round 2: gap-filling pass explicitly told what Round 1 + Peter's list already covered, to avoid re-finding the same names — pushed hardest on Power Electronics (Devices), which Round 1 had only independently found 4 of Peter's 12 established players for; added 5 more major established manufacturers there (Mitsubishi Electric, Fuji Electric, Nexperia, Semikron Danfoss, Microchip Technology). 73 entries total. Each card is tagged by where it came from: Peter's list, this sweep, or both. Some entries are corporate subsidiaries of larger parents (GeneSiC/Navitas, Powdec/Sanken, UnitedSiC/Qorvo, GaN Systems/Renesas, Transphorm/Infineon) — flagged so outreach can target the subsidiary's technical team or route through the parent's BD channel as appropriate. TekSiC is flagged pre-commercial (no customer-validation wafers until mid-2027). Not exhaustive — skews toward English-language sources; some entries rely more on company-published material than independent confirmation. Treat every entry as a lead requiring direct verification before outreach or budget commitment, not a confirmed relationship.";
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function renderProspectScout() {
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var noteEl = document.getElementById('prospect-scout-note');
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if (noteEl) noteEl.textContent = PROSPECT_METHODOLOGY;
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