Surface Outreach's per-entry contact research notes as a flag badge
Outreach finished enriching all 73 prospect_scout.json entries with named contacts (60/73) and per-entry verification notes (unconfirmed LinkedIn matches, SK Siltron's Michigan facility closure, leadership instability at a couple of WBG manufacturers, entries where no contact was found). Merged the notes field from prospect_scout.json into index.html's PROSPECT_RESULTS array (matched by name, all 73 matched cleanly) and generalized the existing correction badge into a combined flag badge: shows a "Dashboard correction" section and/or a "Contact research note" section depending on what each entry has. Verified via jsdom: badge appears and opens correctly for a notes-only entry (SK Siltron CSS) and a both-correction-and-notes entry (GaN Systems).
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@@ -1103,158 +1103,226 @@ function show(id, btn) {
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Each entry: { category, name, location, url, reason }. */
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var PROSPECT_RESULTS = [
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{ category: "Semiconductor Materials & Substrates (GaN/SiC)", name: "SweGaN AB", location: "Linköping, Sweden", url: "https://swegan.se", source: "sweep",
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reason: "GaN-on-SiC epiwafer specialist (QuanFINE line) spun off Linköping University; as an epiwafer maker rather than a device maker, plausibly needs external X-ray defect/structural characterization of its own material." },
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reason: "GaN-on-SiC epiwafer specialist (QuanFINE line) spun off Linköping University; as an epiwafer maker rather than a device maker, plausibly needs external X-ray defect/structural characterization of its own material.",
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notes: "Corroborated across two searches (SweGaN AB employer, Linköping University background). Title closer to \"quality administrator\" than a senior Quality Manager, but best quality-adjacent named contact found." },
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{ category: "Semiconductor Materials & Substrates (GaN/SiC)", name: "SK Siltron CSS", location: "Auburn, Michigan, USA", url: "https://sksiltroncss.com", source: "sweep",
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reason: "SiC wafer supplier with a confirmed 2024 supply agreement with Infineon; plausible customer for crystal-defect qualification via synchrotron topography." },
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reason: "SiC wafer supplier with a confirmed 2024 supply agreement with Infineon; plausible customer for crystal-defect qualification via synchrotron topography.",
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notes: "IMPORTANT: SK Siltron announced July 2026 it is winding down/closing its Bay City/Monitor Township, Michigan SiC wafer operation (~140 workers affected). Given the closure, this is not currently a viable cold-outreach target - verify operating status before contacting or deprioritize." },
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{ category: "Semiconductor Materials & Substrates (GaN/SiC)", name: "TanKeBlue Semiconductor Co., Ltd.", location: "Beijing, China", url: "https://en.tankeblue.com", source: "sweep",
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reason: "Self-described pioneer of China's SiC substrate industry, founded 2006. Fit inferred from product line only, not yet confirmed against a specific published beamtime need." },
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reason: "Self-described pioneer of China's SiC substrate industry, founded 2006. Fit inferred from product line only, not yet confirmed against a specific published beamtime need.",
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notes: "No reliability/quality/BD individual found with a confirmed LinkedIn tied to TanKeBlue - very limited discoverable LinkedIn presence for Chinese staff." },
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{ category: "Semiconductor Materials & Substrates (GaN/SiC)", name: "SICC Co., Ltd.", location: "Jinan, Shandong, China", url: "https://sicc.cc", source: "sweep",
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reason: "SiC crystal-growth manufacturer. Fit inferred from product line only, no independent confirmation of synchrotron use found." },
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reason: "SiC crystal-growth manufacturer. Fit inferred from product line only, no independent confirmation of synchrotron use found.",
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notes: "One weak lead (\"T Y Ang,\" listed as Consultant tied to SICC Materials, R&D recruiting) was too unclear to report with confidence." },
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{ category: "Semiconductor Materials & Substrates (GaN/SiC)", name: "Resonac (formerly Showa Denko)", location: "Tokyo, Japan", url: "https://resonac.com", source: "sweep",
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reason: "World's largest independent supplier of SiC epitaxial wafers; expanding 150mm capacity to ~50,000 wafers/month and starting 200mm mass production, partnering with Soitec on 200mm bonded SiC substrates." },
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reason: "World's largest independent supplier of SiC epitaxial wafers; expanding 150mm capacity to ~50,000 wafers/month and starting 200mm mass production, partnering with Soitec on 200mm bonded SiC substrates.",
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notes: "Strong role match but LinkedIn not verified before agent's search budget ran out - treat as a lead to verify manually. Alternative: Yuki Tanaka, R&D at Resonac (Ibaraki), LinkedIn-confirmed (linkedin.com/in/yuki-tanaka-resonac/), lower seniority." },
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{ category: "Semiconductor Materials & Substrates (GaN/SiC)", name: "Coherent Corp.", location: "Saxonburg, Pennsylvania, USA", url: "https://coherent.com", source: "sweep",
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reason: "Producer of SiC substrates/epitaxy up to 200mm diameter for power electronics (formerly II-VI Advanced Materials)." },
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reason: "Producer of SiC substrates/epitaxy up to 200mm diameter for power electronics (formerly II-VI Advanced Materials).",
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notes: "Reasonably confident, cross-referenced across LinkedIn/ZoomInfo/SignalHire. A more senior alternative, Sohail Khan (EVP, Wide-Bandgap Electronics), is a stronger BD-level contact but his LinkedIn match is UNCONFIRMED (ambiguous with a \"SiGe Semiconductor\" profile)." },
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{ category: "Semiconductor Materials & Substrates (GaN/SiC)", name: "Soitec", location: "Bernin, France", url: "https://soitec.com", source: "sweep",
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reason: "Independent engineered-substrate specialist; its SmartSiC bonded-SiC technology is adopted by STMicroelectronics for future 200mm substrates." },
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reason: "Independent engineered-substrate specialist; its SmartSiC bonded-SiC technology is adopted by STMicroelectronics for future 200mm substrates.",
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notes: "UNCONFIRMED - two distinct LinkedIn URLs surfaced for this name, one description suggests early-career/job-seeking status which raises doubt about current Soitec employment. Recommend manual verification before outreach." },
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{ category: "Semiconductor Materials & Substrates (GaN/SiC)", name: "TekSiC AB", location: "Linköping, Sweden", url: "https://teksic.com", source: "sweep",
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reason: "Founded 2021, building Europe's first domestic semi-insulating SiC wafer supply for GaN RF/defense/satcom, using a proprietary PVT growth reactor. Early-stage — customer-validation wafers not expected until mid-2027, flag as pre-commercial." },
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reason: "Founded 2021, building Europe's first domestic semi-insulating SiC wafer supply for GaN RF/defense/satcom, using a proprietary PVT growth reactor. Early-stage — customer-validation wafers not expected until mid-2027, flag as pre-commercial.",
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notes: "Small (~14-employee) 2021 Linköping University spinout; team page names only Tollstoy, no dedicated reliability/quality/R&D-lead contact found beyond the CEO." },
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{ category: "Semiconductor Materials & Substrates (GaN/SiC)", name: "Kyma Technologies", location: "Raleigh, North Carolina, USA", url: "https://kymatech.com", source: "sweep",
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reason: "US supplier of bulk GaN substrates; partnership with Qromis demonstrated 200mm GaN-on-QST engineered substrates." },
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reason: "US supplier of bulk GaN substrates; partnership with Qromis demonstrated 200mm GaN-on-QST engineered substrates.",
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notes: "Role/tenure confirmed via ZoomInfo/RocketReach but no LinkedIn URL surfaced - recommend a manual LinkedIn search to confirm before outreach. Jacob Leach (CTO) is a plausible alternate, also unconfirmed on LinkedIn." },
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{ category: "Power Electronics (Devices)", name: "Infineon Technologies AG", location: "Neubiberg, Germany", url: "https://infineon.com", source: "both",
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reason: "Peter's Phase 1 list + this sweep. Leading supplier of SiC MOSFETs and GaN power ICs at scale; large-volume production makes epitaxial/interface defect characterization commercially relevant." },
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reason: "Peter's Phase 1 list + this sweep. Leading supplier of SiC MOSFETs and GaN power ICs at scale; large-volume production makes epitaxial/interface defect characterization commercially relevant.",
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notes: "Carried over from Phase 1 PE-12 batch (2026-08-20/21). Note: Sabine E. Herlitschka (CEO, Infineon Austria) is a separate existing warm LinkedIn follower relationship at the Austria subsidiary, not this cold-outreach target." },
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{ category: "Power Electronics (Devices)", name: "Wolfspeed, Inc.", location: "Durham, North Carolina, USA", url: "https://wolfspeed.com", source: "both",
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reason: "Peter's Phase 1 list + this sweep. Largest dedicated SiC materials/wafer producer globally (Mohawk Valley fab) that also makes devices; micropipe/dislocation density is a well-documented synchrotron-topography use case in SiC crystal-growth literature." },
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reason: "Peter's Phase 1 list + this sweep. Largest dedicated SiC materials/wafer producer globally (Mohawk Valley fab) that also makes devices; micropipe/dislocation density is a well-documented synchrotron-topography use case in SiC crystal-growth literature.",
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notes: "Carried over from Phase 1 PE-12 batch. LinkedIn profile personally verified by Mckinley 2026-08-20." },
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{ category: "Power Electronics (Devices)", name: "onsemi", location: "DE / US / Asia / Canada", url: "https://www.onsemi.com", source: "peter",
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reason: "Peter's Phase 1 list. SiC power semiconductor supplier (automotive/industrial), multi-region manufacturing footprint." },
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reason: "Peter's Phase 1 list. SiC power semiconductor supplier (automotive/industrial), multi-region manufacturing footprint.",
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notes: "Carried over from Phase 1 PE-12 batch." },
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{ category: "Power Electronics (Devices)", name: "STMicroelectronics", location: "CH / FR / IT", url: "https://www.st.com", source: "peter",
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reason: "Peter's Phase 1 list. SiC/GaN power devices; already has named researchers publishing ESRF beamtime work on phase-change memory and 3D IC characterisation — a direct synchrotron-use precedent." },
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reason: "Peter's Phase 1 list. SiC/GaN power devices; already has named researchers publishing ESRF beamtime work on phase-change memory and 3D IC characterisation — a direct synchrotron-use precedent.",
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notes: "Carried over from Phase 1 PE-12 batch." },
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{ category: "Power Electronics (Devices)", name: "ROHM", location: "Japan", url: "https://www.rohm.com", source: "peter",
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reason: "Peter's Phase 1 list. Major Japanese SiC power device manufacturer." },
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reason: "Peter's Phase 1 list. Major Japanese SiC power device manufacturer.",
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notes: "Carried over from Phase 1 PE-12 batch." },
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{ category: "Power Electronics (Devices)", name: "Renesas", location: "Japan", url: "https://www.renesas.com", source: "peter",
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reason: "Peter's Phase 1 list. GaN/SiC power device manufacturer; acquired GaN Systems in 2023 (see WBG Device Manufacturer category)." },
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reason: "Peter's Phase 1 list. GaN/SiC power device manufacturer; acquired GaN Systems in 2023 (see WBG Device Manufacturer category).",
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notes: "Carried over from Phase 1 PE-12 batch." },
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{ category: "Power Electronics (Devices)", name: "Power Integrations", location: "USA", url: "https://www.power.com", source: "peter",
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reason: "Peter's Phase 1 list. GaN power IC manufacturer." },
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reason: "Peter's Phase 1 list. GaN power IC manufacturer.",
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notes: "Carried over from Phase 1 PE-12 batch." },
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{ category: "Power Electronics (Devices)", name: "Navitas Semiconductor", location: "Torrance, California, USA", url: "https://navitassemi.com", source: "both",
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reason: "Peter's Phase 1 list + this sweep. GaNFast power IC maker." },
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reason: "Peter's Phase 1 list + this sweep. GaNFast power IC maker.",
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notes: "Carried over from Phase 1 PE-12 batch." },
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{ category: "Power Electronics (Devices)", name: "EPC (Efficient Power Conversion)", location: "USA", url: "https://www.epc-co.com", source: "peter",
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reason: "Peter's Phase 1 list. GaN FET manufacturer." },
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reason: "Peter's Phase 1 list. GaN FET manufacturer.",
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notes: "Carried over from Phase 1 PE-12 batch." },
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{ category: "Power Electronics (Devices)", name: "Innoscience", location: "China", url: "https://www.innoscience.com", source: "peter",
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reason: "Peter's Phase 1 list. Chinese GaN power device manufacturer." },
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reason: "Peter's Phase 1 list. Chinese GaN power device manufacturer.",
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notes: "Carried over from Phase 1 PE-12 batch." },
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{ category: "Power Electronics (Devices)", name: "GaN Systems Inc.", location: "Ottawa, Ontario, Canada", url: "https://www.gansystems.com", source: "both",
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reason: "Peter's Phase 1 list + this sweep. Fabless GaN power switching semiconductor developer, acquired by Infineon in 2023 — Peter's sheet also lists its website as infineon.com, consistent with the acquisition. Flagged as uncertain whether it still operates as an independent prospect entity or is now folded fully into Infineon.",
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correction: "Edited 2026-08-22: an earlier pass had this backwards, saying GaN Systems was acquired by Renesas. Verified via web search — Infineon acquired GaN Systems (2023); Renesas acquired Transphorm instead (see that entry)." },
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correction: "Edited 2026-08-22: an earlier pass had this backwards, saying GaN Systems was acquired by Renesas. Verified via web search — Infineon acquired GaN Systems (2023); Renesas acquired Transphorm instead (see that entry).",
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notes: "Carried over from Phase 1 PE-12 batch. GaN Systems has been a wholly-owned Infineon subsidiary since Oct 2023 - CEO reflects Infineon parent." },
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{ category: "Power Electronics (Devices)", name: "Vishay Intertechnology", location: "USA", url: "https://www.vishay.com", source: "peter",
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reason: "Peter's Phase 1 list. Power discrete semiconductor manufacturer." },
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reason: "Peter's Phase 1 list. Power discrete semiconductor manufacturer.",
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notes: "Carried over from Phase 1 PE-12 batch." },
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{ category: "Power Electronics (Devices)", name: "Mitsubishi Electric", location: "Tokyo, Japan", url: "https://www.mitsubishielectric.com", source: "sweep",
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reason: "Long-standing SiC power module producer (first all-SiC module for Shinkansen trains, 2015); new 200mm SiC wafer fab completed in Kumamoto, Oct 2025; states a goal to be #1 power semiconductor maker by 2030." },
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reason: "Long-standing SiC power module producer (first all-SiC module for Shinkansen trains, 2015); new 200mm SiC wafer fab completed in Kumamoto, Oct 2025; states a goal to be #1 power semiconductor maker by 2030.",
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notes: "Confirmed via Mitsubishi Electric Europe Semiconductor LinkedIn showcase page content. No personal LinkedIn profile URL found despite searching - left blank rather than guess. Role is quality management for the semiconductor division broadly, not confirmed as SiC-specific." },
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{ category: "Power Electronics (Devices)", name: "Fuji Electric", location: "Tokyo, Japan", url: "https://www.fujielectric.com", source: "sweep",
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reason: "Established SiC device/module manufacturer (hybrid Si-IGBT/SiC and full-SiC modules); active EV partnership with Denso on SiC." },
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reason: "Established SiC device/module manufacturer (hybrid Si-IGBT/SiC and full-SiC modules); active EV partnership with Denso on SiC.",
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notes: "Reasonable confidence - profile explicitly ties him to GaN power device R&D at Fuji Electric Japan. R&D rather than a Reliability/Quality/Test title; no clearly power-semiconductor-specific reliability/quality contact surfaced." },
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{ category: "Power Electronics (Devices)", name: "Nexperia", location: "Nijmegen, Netherlands (WBG fab in Hamburg, Germany)", url: "https://nexperia.com", source: "sweep",
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reason: "GaN FET (CCPAK) and SiC MOSFET lines, including devices co-developed with Mitsubishi Electric; $200M investment announced to expand WBG production at its Hamburg fab — notably close to TXproducts' DESY Hamburg beamtime connection." },
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reason: "GaN FET (CCPAK) and SiC MOSFET lines, including devices co-developed with Mitsubishi Electric; $200M investment announced to expand WBG production at its Hamburg fab — notably close to TXproducts' DESY Hamburg beamtime connection.",
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notes: "High confidence - title and location (Hamburg, Nexperia SiC) match exactly; LinkedIn activity on SiC device degradation/power-cycling reliability tests corroborates the role." },
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{ category: "Power Electronics (Devices)", name: "Semikron Danfoss", location: "Nuremberg, Germany / Denmark", url: "https://semikron-danfoss.com", source: "sweep",
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reason: "Largest chip-independent power module manufacturer, partnered with all major SiC chip suppliers; dedicated SiC MOSFET/hybrid module lines up to 600A/1700V." },
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reason: "Largest chip-independent power module manufacturer, partnered with all major SiC chip suppliers; dedicated SiC MOSFET/hybrid module lines up to 600A/1700V.",
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notes: "BD/leadership-level match rather than Reliability/Quality/Test - named directly in the Nexperia-Semikron Danfoss SiC power module collaboration press release, confirming SiC-relevant remit." },
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{ category: "Power Electronics (Devices)", name: "Microchip Technology", location: "Chandler, Arizona, USA", url: "https://www.microchip.com", source: "sweep",
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reason: "Scalable GaN power IC and SiC discrete/module portfolio for industrial, automotive, and aerospace/defense. Also has a distinct rad-hard/rad-tolerant space product line, listed separately under Radiation Hardness." },
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reason: "Scalable GaN power IC and SiC discrete/module portfolio for industrial, automotive, and aerospace/defense. Also has a distinct rad-hard/rad-tolerant space product line, listed separately under Radiation Hardness.",
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notes: "UNCONFIRMED SiC-specificity - confirmed Sr. Quality Manager at Chandler HQ (same site as power/SiC line), responsibilities include reliability monitoring of new process tech, but no source ties him explicitly to SiC/power discretes vs. broader portfolio. Confirm before outreach." },
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{ category: "WBG Device Manufacturer", name: "Cissoid", location: "Belgium", url: "https://www.cissoid.com", source: "peter",
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reason: "Peter's Phase 1 list. SiC/GaN devices for extreme-temperature applications." },
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reason: "Peter's Phase 1 list. SiC/GaN devices for extreme-temperature applications.",
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notes: "No confirmed LinkedIn URL found (only RocketReach/company-team-page mentions). R&D Lead category match." },
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{ category: "WBG Device Manufacturer", name: "WeEn Semiconductors", location: "China / Netherlands", url: "https://www.ween-semi.com", source: "peter",
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reason: "Peter's Phase 1 list. SiC MOSFET manufacturer." },
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reason: "Peter's Phase 1 list. SiC MOSFET manufacturer.",
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notes: "No individually named Reliability/Quality/Test/R&D/BD contact found with confidence. Company (NXP/JAC Capital JV) publicizes a Quality & Reliability lab/certifications but no named lead surfaced." },
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{ category: "WBG Device Manufacturer", name: "Solitron Devices", location: "USA", url: "https://solitrondevices.com", source: "peter",
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reason: "Peter's Phase 1 list. Discrete power devices for Hi-Rel/space applications — also relevant to Radiation Hardness." },
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reason: "Peter's Phase 1 list. Discrete power devices for Hi-Rel/space applications — also relevant to Radiation Hardness.",
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notes: "Career page references a \"QA Manager\" opening but no named individual found. Small company (West Palm Beach, FL) - worth a direct LinkedIn company-page browse rather than search-engine indexing." },
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{ category: "WBG Device Manufacturer", name: "NexGen Power Systems", location: "USA", url: "https://www.nexgenpowersystems.com", source: "peter",
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reason: "Peter's Phase 1 list. GaN power device manufacturer." },
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reason: "Peter's Phase 1 list. GaN power device manufacturer.",
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notes: "No reliability/quality/test/BD contact found below top-executive level." },
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{ category: "WBG Device Manufacturer", name: "GaNPower International", location: "Canada", url: "https://iganpower.com", source: "peter",
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reason: "Peter's Phase 1 list. GaN power device manufacturer." },
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reason: "Peter's Phase 1 list. GaN power device manufacturer.",
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notes: "UNCONFIRMED LinkedIn - title/employer confirmed via ZoomInfo but \"Robert Taylor\" is a very common name and his specific profile could not be isolated with confidence. Verify manually on LinkedIn before outreach." },
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{ category: "WBG Device Manufacturer", name: "Toshiba Electronic Devices", location: "Japan", url: "https://toshiba.semicon-storage.com", source: "peter",
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reason: "Peter's Phase 1 list. SiC and power discrete device manufacturer." },
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reason: "Peter's Phase 1 list. SiC and power discrete device manufacturer.",
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notes: "Good confidence - profile explicitly states his role overseeing Quality & Reliability for Toshiba Devices and Storage." },
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{ category: "WBG Device Manufacturer", name: "X-FAB Silicon Foundries SE", location: "Erfurt, Germany (registered seat Tessenderlo, Belgium)", url: "https://xfab.com", source: "sweep",
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reason: "Self-described first pure-play foundry offering SiC and GaN process technologies; as a foundry serving many fabless WBG designers, defect/process characterization services are directly relevant." },
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reason: "Self-described first pure-play foundry offering SiC and GaN process technologies; as a foundry serving many fabless WBG designers, defect/process characterization services are directly relevant.",
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notes: "Based at X-FAB's Texas (Lubbock) WBG operation, not Erfurt specifically, but same corporate entity. Reasonable confidence for R&D Lead." },
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{ category: "WBG Device Manufacturer", name: "Transphorm Inc.", location: "Goleta, California, USA", url: "https://www.transphormusa.com", source: "sweep",
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reason: "GaN FET maker for high-voltage power conversion, acquired by Renesas (completed June 2024, corrected — an earlier pass wrongly attributed this to Infineon) — independent prospect status uncertain, confirm before outreach.",
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correction: "Edited 2026-08-22: an earlier pass had this backwards, saying Transphorm was acquired by Infineon. Verified via web search — Renesas acquired Transphorm (completed June 2024); Infineon acquired GaN Systems instead (see that entry)." },
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correction: "Edited 2026-08-22: an earlier pass had this backwards, saying Transphorm was acquired by Infineon. Verified via web search — Renesas acquired Transphorm (completed June 2024); Infineon acquired GaN Systems instead (see that entry).",
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notes: "Same pattern as GaN Systems/Infineon - no distinct standalone local CEO. Candidates found (Mike Moschitto = Sr. Facility/EHS Manager, Marcia Moore = Director Product Engineering GaN) did not cleanly match target roles, left blank rather than guess." },
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{ category: "WBG Device Manufacturer", name: "GeneSiC Semiconductor", location: "Dulles, Virginia, USA", url: "https://genesic.com", source: "sweep",
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reason: "SiC pioneer (founded 2004) making SiC rectifiers, transistors, and thyristors; acquired by Navitas Semiconductor in 2022 but still operates as a distinct SiC device brand/line." },
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reason: "SiC pioneer (founded 2004) making SiC rectifiers, transistors, and thyristors; acquired by Navitas Semiconductor in 2022 but still operates as a distinct SiC device brand/line.",
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notes: "Treat as a Navitas Semiconductor business unit going forward, same acquisition pattern as Transphorm/Renesas and GaN Systems/Infineon." },
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{ category: "WBG Device Manufacturer", name: "Qorvo Power Device Solutions (ex-United Silicon Carbide/UnitedSiC)", location: "Princeton, New Jersey, USA", url: "https://www.qorvo.com", source: "sweep",
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reason: "Specialist SiC FET/JFET/Schottky diode portfolio (80+ devices), including 750V/5.9mΩ Gen4 SiC FETs; acquired by Qorvo in 2021, operates within Qorvo's Infrastructure & Defense Products unit as a distinct SiC line." },
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reason: "Specialist SiC FET/JFET/Schottky diode portfolio (80+ devices), including 750V/5.9mΩ Gen4 SiC FETs; acquired by Qorvo in 2021, operates within Qorvo's Infrastructure & Defense Products unit as a distinct SiC line.",
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notes: "Moderate confidence - profile references SiC wafer fab process, QRA, and customer quality, but not 100% confirmed she sits within the ex-UnitedSiC/Power Device Solutions unit specifically vs. broader Qorvo quality org." },
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{ category: "WBG Device Manufacturer", name: "Powdec K.K.", location: "Oyama City, Tochigi, Japan", url: "https://www.powdec.co.jp/english/", source: "sweep",
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reason: "Specialist in GaN-on-GaN epitaxial wafers and devices, holder of PSJ-GaN (Polarization Super Junction GaN) patents. Acquired by Sanken Electric in March 2025." },
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reason: "Specialist in GaN-on-GaN epitaxial wafers and devices, holder of PSJ-GaN (Polarization Super Junction GaN) patents. Acquired by Sanken Electric in March 2025.",
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notes: "A \"Ted Kang\" surfaced, possibly a US-side sales/BD contact for Powdec Technologies USA (San Jose), but title/role could not be confirmed with enough confidence - left blank. Worth a direct LinkedIn company-page check given the recent acquisition." },
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{ category: "WBG Device Manufacturer", name: "STARPOWER Semiconductor", location: "Jiaxing, Zhejiang, China", url: "https://www.powersemi.com", source: "sweep",
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||||
reason: "IGBT/SiC module manufacturer, ranked #5 globally in IGBT modules (2022, #1 among Chinese firms), Shanghai-listed (603290), with R&D/HQ presence in Switzerland and Germany." },
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||||
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||||
reason: "IGBT/SiC module manufacturer, ranked #5 globally in IGBT modules (2022, #1 among Chinese firms), Shanghai-listed (603290), with R&D/HQ presence in Switzerland and Germany.",
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notes: "An early search result incorrectly suggested \"Jie Liu\" as CEO - not corroborated by primary filings, discarded. An \"Amy Chen\" surfaced as affiliated with StarPower Semiconductor on LinkedIn but role unconfirmed, left as not found." },
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{ category: "Device Testing", name: "Applied Technical Services (ATS)", location: "USA", url: "https://atslab.com", source: "peter",
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reason: "Peter's Phase 1 list. Reliability and radiation testing for aerospace semiconductors. Now operates under SGS (see SGS SA entry below) but continues under its own brand." },
|
||||
reason: "Peter's Phase 1 list. Reliability and radiation testing for aerospace semiconductors. Now operates under SGS (see SGS SA entry below) but continues under its own brand.",
|
||||
notes: "Leadership in flux post-acquisition (prior CEO Michael McIlwain served ~2022-2025). No named individual found tied specifically to the radiation-effects testing division. Radiation Test Solutions (separate entry, this same JSON) is confirmed part of the ATS \"Family of Companies\" - a relationship angle worth using in outreach to either." },
|
||||
{ category: "Device Testing", name: "AAA Engineering & Test Lab", location: "USA", url: "https://aaactl.com", source: "peter",
|
||||
reason: "Peter's Phase 1 list. Hi-Rel/space qualification, RadHard testing." },
|
||||
reason: "Peter's Phase 1 list. Hi-Rel/space qualification, RadHard testing.",
|
||||
notes: "Reed Coffey (Technical Sales Manager) confirmed by name/title/photo on company site. Only a company-level LinkedIn page found (linkedin.com/company/aaa-test-lab-inc); no individual profile located - session's search quota was exhausted before a proper person-search could be run. Follow-up manual LinkedIn search recommended." },
|
||||
{ category: "Device Testing", name: "Radiation Test Solutions (RTS)", location: "Colorado Springs, Colorado, USA", url: "https://radiationtestsolutions.com", source: "both",
|
||||
reason: "Peter's Phase 1 list + this sweep (moved here from Radiation Hardness to match Peter's placement). Independent flash-X-ray/heavy-ion/TID radiation-hardness qualification lab (MIL-STD-750/883), spun out of Cobham's radiation-test business in 2020." },
|
||||
reason: "Peter's Phase 1 list + this sweep (moved here from Radiation Hardness to match Peter's placement). Independent flash-X-ray/heavy-ion/TID radiation-hardness qualification lab (MIL-STD-750/883), spun out of Cobham's radiation-test business in 2020.",
|
||||
notes: "Dr. Nabil Mansour (Engineering Manager) confirmed via RTS's own Senior Staff page: joined 2018, 10+ years in radiation effects, PhD, 25+ patents. No LinkedIn located - same search-quota limitation. RTS confirmed part of the Applied Technical Services, LLC family of companies (same as ATS entry, this JSON)." },
|
||||
{ category: "Device Testing", name: "BEAMIDE", location: "EU", url: "https://www.beamide.com", source: "peter",
|
||||
reason: "Peter's Phase 1 list. Irradiation testing per ECSS/ESA standards." },
|
||||
reason: "Peter's Phase 1 list. Irradiation testing per ECSS/ESA standards.",
|
||||
notes: "Efe Alpat (Chief Business Officer) confirmed on beamide.com About Us page (listed as \"Efe\" only, no surname on the visible page, but matches prior research). Only a company LinkedIn page found (linkedin.com/company/beamide-srl); individual profile not located under this session's search constraints." },
|
||||
{ category: "Device Testing", name: "Reltech Limited", location: "Cambridgeshire, UK", url: "https://reltech.co.uk", source: "sweep",
|
||||
reason: "Independent lab (est. 1976) providing semiconductor qualification/reliability testing (HTOL, HAST, LTOL, THB) to fabless/IDM customers; explicitly positions itself as independent." },
|
||||
reason: "Independent lab (est. 1976) providing semiconductor qualification/reliability testing (HTOL, HAST, LTOL, THB) to fabless/IDM customers; explicitly positions itself as independent.",
|
||||
notes: "Good R&D Lead match, confirmed current via LinkedIn snippet. Reltech's own site names almost no current staff - Katra was the only confirmed current, named, role-matched contact." },
|
||||
{ category: "Device Testing", name: "Integra Technologies", location: "Wichita, Kansas, USA", url: "https://integra-tech.com", source: "sweep",
|
||||
reason: "Qualification/reliability testing for semiconductor manufacturers and military/space/aerospace/automotive OEMs, explicitly including high-voltage GaN. Some branding/location inconsistency found across sources — verify HQ directly before outreach." },
|
||||
reason: "Qualification/reliability testing for semiconductor manufacturers and military/space/aerospace/automotive OEMs, explicitly including high-voltage GaN. Some branding/location inconsistency found across sources — verify HQ directly before outreach.",
|
||||
notes: "Integra was acquired by Micross Components (Apollo/Behrman/BlackRock-backed) Jan 2025; Robinson appears to remain President/CEO of the subsidiary. No Quality/Reliability/Test/BD contact found (Integra's Management Team/Quality pages returned 403). Montgomery is the closest identifiable named current contact, though GM/Ops rather than an exact role match." },
|
||||
{ category: "Device Testing", name: "SGS SA", location: "Geneva, Switzerland", url: "https://sgs.com", source: "sweep",
|
||||
reason: "Global third-party AEC-Q101/AEC-Q102 semiconductor reliability/qualification testing, including automotive-grade discretes and power devices." },
|
||||
reason: "Global third-party AEC-Q101/AEC-Q102 semiconductor reliability/qualification testing, including automotive-grade discretes and power devices.",
|
||||
notes: "LOW CONFIDENCE - title/division from a single 2023 mention (Shenzhen Semiconductor Tech Forum), no LinkedIn profile located, Chinese-name transliteration makes matching unreliable. Treat as a lead to verify manually, not outreach-ready." },
|
||||
{ category: "Device Testing", name: "PCsemic (Chongqing Pingchuang Institute of Semiconductors Co., Ltd.)", location: "Chongqing, China", url: "https://pcsemic.com", source: "sweep",
|
||||
reason: "Operates a dedicated Power Device Reliability Laboratory (HTRB/HTGB chip-level, H3TRB/TC/HAST package-level). Independence from single device makers not yet confirmed." },
|
||||
reason: "Operates a dedicated Power Device Reliability Laboratory (HTRB/HTGB chip-level, H3TRB/TC/HAST package-level). Independence from single device makers not yet confirmed.",
|
||||
notes: "No named individuals found anywhere on pcsemic.com (About Us, News, Reliability pages checked) or on LinkedIn. Likely needs a different research channel (Chinese business registries / China-market-specific outreach) rather than Western web search." },
|
||||
{ category: "Device Testing", name: "Presto Engineering", location: "Caen, France", url: "https://www.presto-eng.com", source: "sweep",
|
||||
reason: "Independent semiconductor test/failure-analysis/qualification house on a former NXP facility; >€50M invested across 4 test floors, explicit die-, package-, and board-level qualification services." },
|
||||
reason: "Independent semiconductor test/failure-analysis/qualification house on a former NXP facility; >€50M invested across 4 test floors, explicit die-, package-, and board-level qualification services.",
|
||||
notes: "Confirmed via Presto's own Management Team page, cross-checked against LinkedIn. Strong BD-angle match. Alternate: Didier Narassiguin, VP IP & NPI (R&D Lead angle) - linkedin.com/in/didier-narassiguin-735096b/, found via search but not independently re-verified." },
|
||||
{ category: "Device Testing", name: "Aehr Test Systems", location: "Fremont, California, USA", url: "https://www.aehr.com", source: "sweep",
|
||||
reason: "States it is the leader in wafer-level burn-in specifically for SiC and GaN devices — directly on-topic for WBG device qualification, feeding failure-mode data back to fabs/designers." },
|
||||
reason: "States it is the leader in wafer-level burn-in specifically for SiC and GaN devices — directly on-topic for WBG device qualification, feeding failure-mode data back to fabs/designers.",
|
||||
notes: "Confirmed via Aehr's own About Us page, no LinkedIn found. Alternate: Scott Lindsey, Staff Scientist, recognized reliability-testing expert - linkedin.com/in/scottearllindsey/ - found via search but could not be fetched/verified directly (LinkedIn bot-blocking), unconfirmed." },
|
||||
{ category: "Device Testing", name: "Ansys Reliability Engineering Services (formerly DfR Solutions)", location: "College Park, Maryland, USA", url: "https://www.ansys.com", source: "sweep",
|
||||
reason: "Independent reliability lab (20,000 sq ft facility): accelerated life testing, failure analysis, component reliability and materials characterization." },
|
||||
reason: "Independent reliability lab (20,000 sq ft facility): accelerated life testing, failure analysis, component reliability and materials characterization.",
|
||||
notes: "Multiple independent sources consistently place him leading the former-DfR-Solutions reliability services team, though exact title varies slightly across sources. Reasonably confident on person/company match." },
|
||||
{ category: "Device Testing", name: "EAG Laboratories", location: "Multiple US/global sites", url: "https://www.eag.com", source: "sweep",
|
||||
reason: "Independent reliability/qualification lab offering HTOL, thermal shock, preconditioning, THB, and HAST testing services." },
|
||||
reason: "Independent reliability/qualification lab offering HTOL, thermal shock, preconditioning, THB, and HAST testing services.",
|
||||
notes: "Strong BD-angle match, title explicit in profile summary. Global/APAC site rather than US, acceptable given EAG has multiple US/global sites. A US-based alternate (Canh Ly, Sunnyvale CA) was ruled out - he has since left EAG for Ultra Clean Technology." },
|
||||
{ category: "Device Testing", name: "Element Materials Technology (formerly NTS)", location: "London, UK (global sites)", url: "https://www.element.com", source: "sweep",
|
||||
reason: "Broad qualification/certification testing services including a defense/space division (Element U.S. Space and Defense); a general provider rather than SiC/GaN-specific, useful as a large umbrella contact." },
|
||||
|
||||
reason: "Broad qualification/certification testing services including a defense/space division (Element U.S. Space and Defense); a general provider rather than SiC/GaN-specific, useful as a large umbrella contact.",
|
||||
notes: "Confirmed name/title directly from Element's own \"Our Experts\" page - strong, specific match to the semiconductor/electronics test division. LinkedIn UNCONFIRMED - multiple people share this name, could not cross-reference before search access exhausted." },
|
||||
{ category: "Radiation Hardness", name: "RADNEXT (CERN-coordinated)", location: "EU", url: "https://radnext.web.cern.ch", source: "peter",
|
||||
reason: "Peter's Phase 1 list. European irradiation facility network." },
|
||||
reason: "Peter's Phase 1 list. European irradiation facility network.",
|
||||
notes: "LinkedIn confirmed - profile activity discusses RADNEXT 2030 and access to irradiation facilities, consistent with the role. High confidence." },
|
||||
{ category: "Radiation Hardness", name: "ESA ESTEC / TEC-QEC", location: "Netherlands", url: "https://www.esa.int/Enabling_Support/Space_Engineering_Technology/Radiation_a_testing_challenge", source: "peter",
|
||||
reason: "Peter's Phase 1 list. Radiation hardness assurance for space. No dedicated public TEC-QEC page found — linked to ESA's general radiation-testing overview instead; ESCIES (escies.org) is the closest detailed public resource." },
|
||||
reason: "Peter's Phase 1 list. Radiation hardness assurance for space. No dedicated public TEC-QEC page found — linked to ESA's general radiation-testing overview instead; ESCIES (escies.org) is the closest detailed public resource.",
|
||||
notes: "LinkedIn URL found (linkedin.com/in/alessandra-costantino-283bba12b/) but NOT used - profile's stated current affiliation is Università degli Studi di Bari, not ESA/ESTEC. Could mean she's a contractor/collaborator, or a different Alessandra Costantino entirely (name returned several unrelated matches). Do not use without manual verification of current employer." },
|
||||
{ category: "Radiation Hardness", name: "Paul Scherrer Institute (PSI)", location: "Switzerland", url: "https://www.psi.ch/en", source: "peter",
|
||||
reason: "Peter's Phase 1 list. Proton irradiation facility." },
|
||||
reason: "Peter's Phase 1 list. Proton irradiation facility.",
|
||||
notes: "Confirmed via PSI's own PIF facility page, high confidence on name/role. LinkedIn search only returned unrelated same-name people - left blank rather than guess." },
|
||||
{ category: "Radiation Hardness", name: "BAE Systems — Space Systems", location: "Manassas, Virginia, USA (global HQ Farnborough, UK)", url: "https://baesystems.com", source: "sweep",
|
||||
reason: "Produces the RAD5545/RAD750 radiation-hardened space processor line at a DoD Category 1A Trusted Source facility; long NASA/DoD track record." },
|
||||
reason: "Produces the RAD5545/RAD750 radiation-hardened space processor line at a DoD Category 1A Trusted Source facility; long NASA/DoD track record.",
|
||||
notes: "Nixon's profile ties his history to the Manassas site's IBM Federal Systems -> Loral -> Lockheed Martin -> BAE Systems lineage, good confidence. Global BAE Systems plc CEO not listed since this is division-specific." },
|
||||
{ category: "Radiation Hardness", name: "Teledyne e2v", location: "Chelmsford, Essex, UK", url: "https://teledyne-e2v.com", source: "sweep",
|
||||
reason: "Produces radiation-hardened data converters, microprocessors, and custom ASICs for space/avionics." },
|
||||
reason: "Produces radiation-hardened data converters, microprocessors, and custom ASICs for space/avionics.",
|
||||
notes: "Moderate confidence - LinkedIn URL from search snippets only, direct profile fetch failed so title/employer not independently re-verified." },
|
||||
{ category: "Radiation Hardness", name: "VORAGO Technologies", location: "Austin, Texas, USA", url: "https://voragotech.com", source: "sweep",
|
||||
reason: "Rad-hard MCUs/components for space and nuclear environments via a proprietary HARDSIL process; specifics mostly sourced from company material, limited independent confirmation." },
|
||||
reason: "Rad-hard MCUs/components for space and nuclear environments via a proprietary HARDSIL process; specifics mostly sourced from company material, limited independent confirmation.",
|
||||
notes: "Appointment confirmed via company press coverage, but LinkedIn profile could not be isolated among many unrelated \"Brad Boyer\" profiles. Alternate with confirmed LinkedIn: Garry Nash, COO (oversees Quality/Test/Ops) - linkedin.com/in/garrynash - role fits less precisely but is a safer fallback." },
|
||||
{ category: "Radiation Hardness", name: "Heavy Ion Facility, Université catholique de Louvain (UCLouvain)", location: "Louvain-la-Neuve, Belgium", url: "https://www.uclouvain.be/en/research-institutes/irmp/heavy-ion-facility-hif", source: "sweep",
|
||||
reason: "ESA-preferred external single-event-effects test facility (CYCLONE cyclotron); a potential collaborator/co-location partner rather than a paying customer." },
|
||||
reason: "ESA-preferred external single-event-effects test facility (CYCLONE cyclotron); a potential collaborator/co-location partner rather than a paying customer.",
|
||||
notes: "Name/role confirmed via CERN RD50 irradiation-facilities page and CRC contact info. A \"Carmen Angulo\" LinkedIn profile found lists SCK CEN (Belgian Nuclear Research Centre, Mol) - a DIFFERENT institution - so not used; could be an outdated employer field or a different person. Left unconfirmed." },
|
||||
{ category: "Radiation Hardness", name: "TTM Technologies", location: "Costa Mesa, California, USA", url: "https://www.ttm.com", source: "sweep",
|
||||
reason: "Supplier of rad-hard microcircuits to aerospace/space/defense, certified to MIL-PRF-38534 Class H and Class K (space-grade)." },
|
||||
reason: "Supplier of rad-hard microcircuits to aerospace/space/defense, certified to MIL-PRF-38534 Class H and Class K (space-grade).",
|
||||
notes: "Highest-confidence match in this category - profile directly fetched, confirms rad-hard/space BD work at TTM including RADECS 2025 and Space Tech Expo activity." },
|
||||
{ category: "Radiation Hardness", name: "Data Device Corporation (DDC)", location: "Bohemia, New York, USA (Center of Excellence in Poway, CA)", url: "https://www.ddc-web.com", source: "sweep",
|
||||
reason: "Runs a \"Center of Excellence for Radiation Tolerant Microelectronics and Single Board Computers,\" qualified to MIL-PRF-38534/38535." },
|
||||
reason: "Runs a \"Center of Excellence for Radiation Tolerant Microelectronics and Single Board Computers,\" qualified to MIL-PRF-38534/38535.",
|
||||
notes: "Profile confirms DDC affiliation and BD/engineering focus, but exact current title not fully visible in the scrape - reasonably confident, not 100%." },
|
||||
{ category: "Radiation Hardness", name: "Frontgrade Gaisler", location: "Gothenburg, Sweden", url: "https://www.gaisler.com", source: "sweep",
|
||||
reason: "Maker of rad-hard LEON-family processors (GR712RC, GR740) flown on hundreds of spacecraft; GR740 designated ESA's \"Next Generation Microprocessor,\" close ESA/industry ties." },
|
||||
reason: "Maker of rad-hard LEON-family processors (GR712RC, GR740) flown on hundreds of spacecraft; GR740 designated ESA's \"Next Generation Microprocessor,\" close ESA/industry ties.",
|
||||
notes: "Name/title came directly from Gaisler's own official team page - strong role match - but no LinkedIn profile located before search budget ran out. Alternate on same page: Annalena Johansson, Business Development Manager, also no LinkedIn located." },
|
||||
{ category: "Radiation Hardness", name: "RADEF (Radiation Effects Facility), University of Jyväskylä", location: "Jyväskylä, Finland", url: "https://www.jyu.fi", source: "sweep",
|
||||
reason: "ESA-supported European Component Irradiation Facility (since 2005) providing proton/heavy-ion/electron irradiation testing for space electronics, used by ESA, NASA, JAXA, CNES and European industry — a peer facility to the already-listed PSI and UCLouvain sites." },
|
||||
reason: "ESA-supported European Component Irradiation Facility (since 2005) providing proton/heavy-ion/electron irradiation testing for space electronics, used by ESA, NASA, JAXA, CNES and European industry — a peer facility to the already-listed PSI and UCLouvain sites.",
|
||||
notes: "Confirmed via RADEF's own official facility page as the named beam-time contact - good facility-lead equivalent. No LinkedIn found before search budget exhausted." },
|
||||
{ category: "Radiation Hardness", name: "Microchip Technology (rad-hard/rad-tolerant line)", location: "Chandler, Arizona, USA", url: "https://www.microchip.com", source: "sweep",
|
||||
reason: "Same company as the Power Electronics (Devices) entry above, listed here separately for its distinct aerospace rad-hard/rad-tolerant product line — states it offers one of the widest selections of rad-hard/rad-tolerant parts for space." },
|
||||
|
||||
reason: "Same company as the Power Electronics (Devices) entry above, listed here separately for its distinct aerospace rad-hard/rad-tolerant product line — states it offers one of the widest selections of rad-hard/rad-tolerant parts for space.",
|
||||
notes: "LOWEST CONFIDENCE in this category - name/role from a single secondary web source, not Microchip's own site (direct fetch returned 403) nor a verified LinkedIn profile. Treat as a lead to verify manually, not a confirmed contact." },
|
||||
{ category: "Research & Collaborations", name: "Stony Brook University — Laboratory for Synchrotron X-ray Topography", location: "Stony Brook, New York, USA", url: "https://you.stonybrook.edu/xraycharacterization/", source: "sweep",
|
||||
reason: "PI Michael Dudley publishes synchrotron X-ray topography of GaN and 4H-SiC power-device material (ARPA-E sponsored) — the single most directly on-topic match found in this sweep." },
|
||||
reason: "PI Michael Dudley publishes synchrotron X-ray topography of GaN and 4H-SiC power-device material (ARPA-E sponsored) — the single most directly on-topic match found in this sweep.",
|
||||
notes: "Strong fit - direct match to synchrotron X-ray defect characterization service. LinkedIn URL has minor uncertainty (two similar-suffix profile URLs found for what appears to be the same person; a clearly unrelated \"hospital grounds\" Michael Dudley also surfaced and was excluded). Contact page: you.stonybrook.edu/xraycharacterization/contact-us/" },
|
||||
{ category: "Research & Collaborations", name: "ETH Zurich — Advanced Power Semiconductor Laboratory", location: "Zurich, Switzerland", url: "https://aps.ee.ethz.ch/", source: "sweep",
|
||||
reason: "Prof. Ulrike Grossner's group published 2025 work on defect formation in heavy-ion-degraded SiC power MOSFETs — a natural bridge between the WBG-device and rad-hardness categories." },
|
||||
reason: "Prof. Ulrike Grossner's group published 2025 work on defect formation in heavy-ion-degraded SiC power MOSFETs — a natural bridge between the WBG-device and rad-hardness categories.",
|
||||
notes: "Confident match - Zurich location listed, consistent with role. Strong fit for wide-bandgap (SiC/GaN) materials/device research." },
|
||||
{ category: "Research & Collaborations", name: "Vanderbilt University — Institute for Space and Defense Electronics", location: "Nashville, Tennessee, USA", url: "https://www.vanderbilt.edu/isde/", source: "sweep",
|
||||
reason: "Schrimpf/Fleetwood group has a long DTRA/ONR-funded track record studying radiation effects in GaN/SiC materials and devices — a strong potential co-authorship partner." },
|
||||
reason: "Schrimpf/Fleetwood group has a long DTRA/ONR-funded track record studying radiation effects in GaN/SiC materials and devices — a strong potential co-authorship partner.",
|
||||
notes: "Reasonably confident. Note: ISDE recently changed leadership - founding director Ronald Schrimpf stepped back to a professorship, Mike Alles is now Associate Director. Sierawski focuses on radiation effects/single-event effects, more device-reliability/radiation-testing oriented than materials-defect X-ray imaging - still relevant, just a slightly different angle. Verify currency before outreach." },
|
||||
{ category: "Research & Collaborations", name: "University of Warwick — PEATER group", location: "Coventry, UK", url: "https://warwick.ac.uk/fac/sci/eng/research/grouplist/electricalpower/peater/", source: "sweep",
|
||||
reason: "Prof. Philip Mawby's 20+ year, ~25-researcher group is a major UK academic center for SiC power device/materials research that could want defect/epitaxy X-ray characterization support." },
|
||||
reason: "Prof. Philip Mawby's 20+ year, ~25-researcher group is a major UK academic center for SiC power device/materials research that could want defect/epitaxy X-ray characterization support.",
|
||||
notes: "UNCONFIRMED - moderately confident only (posts reference WiPDA-Europe/EVTec conferences consistent with his field, but several other unrelated \"Phil/Philip Mawby\" profiles exist). Verify before outreach. Alternate contact: Prof. Peter Gammon, same group, leads SiC power device research specifically - may be a tighter fit." },
|
||||
{ category: "Research & Collaborations", name: "NASA Goddard Space Flight Center — NEPP Program", location: "Greenbelt, Maryland, USA", url: "https://nepp.nasa.gov/", source: "sweep",
|
||||
reason: "Runs heavy-ion/TID radiation qualification studies on SiC/GaN power devices for spaceflight. A government research program, not a company — engagement would follow a different channel than a commercial prospect." },
|
||||
reason: "Runs heavy-ion/TID radiation qualification studies on SiC/GaN power devices for spaceflight. A government research program, not a company — engagement would follow a different channel than a commercial prospect.",
|
||||
notes: "No LinkedIn found (normal for this role). Confirmed current as of 2025 workshop materials. Use official contact channel only: nepp.nasa.gov/pages/Contact-NEPP.cfm - do not use scraped email addresses per compliance guidance. Deputy Manager Susana Douglas is a secondary contact." },
|
||||
{ category: "Research & Collaborations", name: "Nagoya University — Center for Integrated Research of Future Electronics", location: "Nagoya, Japan", url: "https://imass.nagoya-u.ac.jp/en/organization/cirfe/", source: "sweep",
|
||||
reason: "Active in X-ray topography defect analysis of GaN substrates, appearing in recent (2026) published work on SiC/GaN crystal defect characterization — a plausible co-authorship/joint-beamtime partner for the APAC region." },
|
||||
reason: "Active in X-ray topography defect analysis of GaN substrates, appearing in recent (2026) published work on SiC/GaN crystal defect characterization — a plausible co-authorship/joint-beamtime partner for the APAC region.",
|
||||
notes: "No LinkedIn found (two \"Hiroshi Amano\" profiles found are clearly different people - a video-production owner and a renewable-energy sales director - neither matches). Very high-profile (Nobel laureate) - likely routed through admin staff rather than reached directly. Worth identifying a CIRFE power-electronics deputy/section lead as a more responsive first contact." },
|
||||
{ category: "Research & Collaborations", name: "Linköping University — C3NiT-Janzén Center", location: "Linköping, Sweden", url: "https://c3nit.se/", source: "sweep",
|
||||
reason: "VINNOVA-funded Center for III-Nitride Technology (Erik Janzén group), deep publication record on GaN/SiC materials defects and epitaxy, with direct industry ties to SweGaN (already listed under Semiconductor Materials & Substrates) and to Ericsson/Saab." },
|
||||
reason: "VINNOVA-funded Center for III-Nitride Technology (Erik Janzén group), deep publication record on GaN/SiC materials defects and epitaxy, with direct industry ties to SweGaN (already listed under Semiconductor Materials & Substrates) and to Ericsson/Saab.",
|
||||
notes: "Confident match - multiple posts explicitly reference C3NiT activity, confirmed via center contact page. Good fit: III-nitride power/high-frequency semiconductor materials. Center named for founding figure Erik Janzén, but Darakchieva is current operational director." },
|
||||
{ category: "Research & Collaborations", name: "Chalmers University of Technology", location: "Gothenburg, Sweden", url: "https://www.chalmers.se/en/", source: "sweep",
|
||||
reason: "Distinct from Linköping — collaborates with SweGaN, Ericsson and Saab on GaN power-amplifier work, most recently a 2025 6G GaN project." },
|
||||
reason: "Distinct from Linköping — collaborates with SweGaN, Ericsson and Saab on GaN power-amplifier work, most recently a 2025 6G GaN project.",
|
||||
notes: "Confident match - Gothenburg location consistent. Chalmers has no single dedicated \"power semiconductor lab\" brand; Rorsman's group (GaN-on-SiC HEMTs) inside MC2 is closest fit. Chalmers is also a partner in the C3NiT network (see Linköping entry) - possible cross-referral." },
|
||||
{ category: "Research & Collaborations", name: "Fraunhofer IISB", location: "Erlangen, Germany", url: "https://www.iisb.fraunhofer.de/", source: "sweep",
|
||||
reason: "Research institute performing full-wafer-scale X-ray topography defect mapping of SiC substrates/epilayers up to 200mm, plus device fabrication/characterization on a qualified 150mm SiC line — a very concrete fit, and geographically close to DESY." },
|
||||
reason: "Research institute performing full-wafer-scale X-ray topography defect mapping of SiC substrates/epilayers up to 200mm, plus device fabrication/characterization on a qualified 150mm SiC line — a very concrete fit, and geographically close to DESY.",
|
||||
notes: "LinkedIn NOT included - a \"Jörg Schulze - Bayern Innovativ GmbH\" profile surfaced but the listed employer does not match his stated Fraunhofer IISB director role (could be an outdated listing or same-name mismatch). Do not use without independent verification. Topical fit is strong (prior SiC power electronics research background from Stuttgart institute)." },
|
||||
{ category: "Research & Collaborations", name: "ESRF — Rocking-Curve Imaging group", location: "Grenoble, France", url: "https://www.esrf.fr/home/Industry/industry-news/content-news/esrf-news-list/semiconductor-defect-imaging.html", source: "sweep",
|
||||
reason: "A peer synchrotron facility (not a customer) that developed rocking-curve imaging specifically for SiC/GaN defect imaging and has published industry-facing material on it — useful as a model/comparator or potential collaborator contact." }
|
||||
reason: "A peer synchrotron facility (not a customer) that developed rocking-curve imaging specifically for SiC/GaN defect imaging and has published industry-facing material on it — useful as a model/comparator or potential collaborator contact.",
|
||||
notes: "Arguably the single best-fit contact on the whole 73-company list - an Industrial Liaison Engineer role for the exact RCI/X-ray topography technique TXproducts offers; BM05 explicitly serves semiconductor/power-electronics industry clients. No LinkedIn found. Secondary contact: Benoît Cordonnier (scientist in charge of BM05). Contact page: esrf.fr/home/UsersAndScience/Experiments/StructMaterials/BM05/Contacts.html" }
|
||||
];
|
||||
var PROSPECT_METHODOLOGY_INTRO = "Methodology / Verification Note — two rounds, 2026-08-22:";
|
||||
var PROSPECT_METHODOLOGY = [
|
||||
@@ -1320,7 +1388,7 @@ function renderProspectScout() {
|
||||
byCategory[cat].forEach(function (c) {
|
||||
var card = document.createElement('div');
|
||||
card.className = 'client-card';
|
||||
var hasTopRow = c.source || c.correction;
|
||||
var hasTopRow = c.source || c.correction || c.notes;
|
||||
if (hasTopRow) {
|
||||
var topRow = document.createElement('div');
|
||||
topRow.style.display = 'flex';
|
||||
@@ -1337,7 +1405,7 @@ function renderProspectScout() {
|
||||
badge.textContent = SOURCE_LABEL[c.source] || c.source;
|
||||
topRow.appendChild(badge);
|
||||
}
|
||||
if (c.correction) {
|
||||
if (c.correction || c.notes) {
|
||||
var corrWrap = document.createElement('span');
|
||||
corrWrap.style.position = 'relative';
|
||||
corrWrap.style.display = 'inline-flex';
|
||||
@@ -1345,8 +1413,26 @@ function renderProspectScout() {
|
||||
corrBadge.textContent = '?';
|
||||
corrBadge.style.cssText = 'display:inline-flex;align-items:center;justify-content:center;width:18px;height:18px;min-width:18px;border-radius:50%;background:var(--yellow);color:var(--txt);font-size:11px;font-weight:800;cursor:pointer;flex-shrink:0;';
|
||||
var corrTip = document.createElement('div');
|
||||
corrTip.style.cssText = 'display:none;position:absolute;top:100%;right:0;z-index:100;margin-top:8px;width:240px;text-align:left;background:var(--surface);border:1px solid var(--border);border-left:4px solid var(--yellow);border-radius:8px;padding:12px 14px;box-shadow:0 4px 16px rgba(26,78,122,0.18);font-size:12px;color:var(--txt-s);line-height:1.5;font-weight:400;';
|
||||
corrTip.textContent = c.correction;
|
||||
corrTip.style.cssText = 'display:none;position:absolute;top:100%;right:0;z-index:100;margin-top:8px;width:260px;text-align:left;background:var(--surface);border:1px solid var(--border);border-left:4px solid var(--yellow);border-radius:8px;padding:12px 14px;box-shadow:0 4px 16px rgba(26,78,122,0.18);font-size:12px;color:var(--txt-s);line-height:1.5;font-weight:400;';
|
||||
if (c.correction) {
|
||||
var corrLabel = document.createElement('div');
|
||||
corrLabel.style.cssText = 'font-weight:800;color:var(--navy);font-size:11px;text-transform:uppercase;letter-spacing:0.05em;margin-bottom:4px;';
|
||||
corrLabel.textContent = 'Dashboard correction';
|
||||
var corrText = document.createElement('div');
|
||||
corrText.style.marginBottom = c.notes ? '10px' : '0';
|
||||
corrText.textContent = c.correction;
|
||||
corrTip.appendChild(corrLabel);
|
||||
corrTip.appendChild(corrText);
|
||||
}
|
||||
if (c.notes) {
|
||||
var notesLabel = document.createElement('div');
|
||||
notesLabel.style.cssText = 'font-weight:800;color:var(--navy);font-size:11px;text-transform:uppercase;letter-spacing:0.05em;margin-bottom:4px;';
|
||||
notesLabel.textContent = 'Contact research note';
|
||||
var notesText = document.createElement('div');
|
||||
notesText.textContent = c.notes;
|
||||
corrTip.appendChild(notesLabel);
|
||||
corrTip.appendChild(notesText);
|
||||
}
|
||||
corrBadge.addEventListener('click', function (tip) {
|
||||
return function (e) { e.stopPropagation(); toggleTipEl(tip); };
|
||||
}(corrTip));
|
||||
|
||||
+301
-301
File diff suppressed because it is too large.
Load diff
Reference in new issue
Block a user