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Add website links to every Prospect Scout card, fix acquisition mix-up

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Filled in the 26 entries that had no url field yet, each verified via
web search rather than guessed. Also caught and fixed a factual error:
Transphorm was acquired by Renesas (completed June 2024), not Infineon
as an earlier pass had it — GaN Systems is the one Infineon acquired
(2023), consistent with Peter's sheet listing its site as infineon.com.
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beantownbabe committed 2026-08-22 10:43:01 +02:00
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@@ -1133,8 +1133,8 @@ var PROSPECT_RESULTS = [
reason: "Peter's Phase 1 list. GaN FET manufacturer." },
{ division: "Power Electronics (Devices)", name: "Innoscience", location: "China", url: "https://www.innoscience.com", source: "peter",
reason: "Peter's Phase 1 list. Chinese GaN power device manufacturer." },
{ division: "Power Electronics (Devices)", name: "GaN Systems Inc.", location: "Ottawa, Ontario, Canada", source: "both",
reason: "Peter's Phase 1 list + this sweep. Fabless GaN power switching semiconductor developer, acquired by Renesas in 2023 — Peter's sheet lists its website as infineon.com, worth double-checking whether that's a transcription artifact or reflects a different current status. Flagged as uncertain whether it still operates as an independent prospect entity." },
{ division: "Power Electronics (Devices)", name: "GaN Systems Inc.", location: "Ottawa, Ontario, Canada", url: "https://www.gansystems.com", source: "both",
reason: "Peter's Phase 1 list + this sweep. Fabless GaN power switching semiconductor developer, acquired by Infineon in 2023 — Peter's sheet also lists its website as infineon.com, consistent with the acquisition. Flagged as uncertain whether it still operates as an independent prospect entity or is now folded fully into Infineon." },
{ division: "Power Electronics (Devices)", name: "Vishay Intertechnology", location: "USA", url: "https://www.vishay.com", source: "peter",
reason: "Peter's Phase 1 list. Power discrete semiconductor manufacturer." },
{ division: "Power Electronics (Devices)", name: "Mitsubishi Electric", location: "Tokyo, Japan", url: "https://www.mitsubishielectric.com", source: "sweep",
@@ -1148,38 +1148,38 @@ var PROSPECT_RESULTS = [
{ division: "Power Electronics (Devices)", name: "Microchip Technology", location: "Chandler, Arizona, USA", url: "https://www.microchip.com", source: "sweep",
reason: "Scalable GaN power IC and SiC discrete/module portfolio for industrial, automotive, and aerospace/defense. Also has a distinct rad-hard/rad-tolerant space product line, listed separately under Radiation Hardness." },
{ division: "WBG Device Manufacturer", name: "Cissoid", location: "Belgium", source: "peter",
{ division: "WBG Device Manufacturer", name: "Cissoid", location: "Belgium", url: "https://www.cissoid.com", source: "peter",
reason: "Peter's Phase 1 list. SiC/GaN devices for extreme-temperature applications." },
{ division: "WBG Device Manufacturer", name: "WeEn Semiconductors", location: "China / Netherlands", source: "peter",
{ division: "WBG Device Manufacturer", name: "WeEn Semiconductors", location: "China / Netherlands", url: "https://www.ween-semi.com", source: "peter",
reason: "Peter's Phase 1 list. SiC MOSFET manufacturer." },
{ division: "WBG Device Manufacturer", name: "Solitron Devices", location: "USA", source: "peter",
{ division: "WBG Device Manufacturer", name: "Solitron Devices", location: "USA", url: "https://solitrondevices.com", source: "peter",
reason: "Peter's Phase 1 list. Discrete power devices for Hi-Rel/space applications — also relevant to Radiation Hardness." },
{ division: "WBG Device Manufacturer", name: "NexGen Power Systems", location: "USA", source: "peter",
{ division: "WBG Device Manufacturer", name: "NexGen Power Systems", location: "USA", url: "https://www.nexgenpowersystems.com", source: "peter",
reason: "Peter's Phase 1 list. GaN power device manufacturer." },
{ division: "WBG Device Manufacturer", name: "GaNPower International", location: "Canada", source: "peter",
{ division: "WBG Device Manufacturer", name: "GaNPower International", location: "Canada", url: "https://iganpower.com", source: "peter",
reason: "Peter's Phase 1 list. GaN power device manufacturer." },
{ division: "WBG Device Manufacturer", name: "Toshiba Electronic Devices", location: "Japan", source: "peter",
{ division: "WBG Device Manufacturer", name: "Toshiba Electronic Devices", location: "Japan", url: "https://toshiba.semicon-storage.com", source: "peter",
reason: "Peter's Phase 1 list. SiC and power discrete device manufacturer." },
{ division: "WBG Device Manufacturer", name: "X-FAB Silicon Foundries SE", location: "Erfurt, Germany (registered seat Tessenderlo, Belgium)", url: "https://xfab.com", source: "sweep",
reason: "Self-described first pure-play foundry offering SiC and GaN process technologies; as a foundry serving many fabless WBG designers, defect/process characterization services are directly relevant." },
{ division: "WBG Device Manufacturer", name: "Transphorm Inc.", location: "Goleta, California, USA", source: "sweep",
reason: "GaN FET maker for high-voltage power conversion, now part of Infineon after acquisition — independent prospect status uncertain, confirm before outreach." },
{ division: "WBG Device Manufacturer", name: "Transphorm Inc.", location: "Goleta, California, USA", url: "https://www.transphormusa.com", source: "sweep",
reason: "GaN FET maker for high-voltage power conversion, acquired by Renesas (completed June 2024, corrected — an earlier pass wrongly attributed this to Infineon) — independent prospect status uncertain, confirm before outreach." },
{ division: "WBG Device Manufacturer", name: "GeneSiC Semiconductor", location: "Dulles, Virginia, USA", url: "https://genesic.com", source: "sweep",
reason: "SiC pioneer (founded 2004) making SiC rectifiers, transistors, and thyristors; acquired by Navitas Semiconductor in 2022 but still operates as a distinct SiC device brand/line." },
{ division: "WBG Device Manufacturer", name: "Qorvo Power Device Solutions (ex-United Silicon Carbide/UnitedSiC)", location: "Princeton, New Jersey, USA", url: "https://www.qorvo.com", source: "sweep",
reason: "Specialist SiC FET/JFET/Schottky diode portfolio (80+ devices), including 750V/5.9mΩ Gen4 SiC FETs; acquired by Qorvo in 2021, operates within Qorvo's Infrastructure & Defense Products unit as a distinct SiC line." },
{ division: "WBG Device Manufacturer", name: "Powdec K.K.", location: "Oyama City, Tochigi, Japan", source: "sweep",
{ division: "WBG Device Manufacturer", name: "Powdec K.K.", location: "Oyama City, Tochigi, Japan", url: "https://www.powdec.co.jp/english/", source: "sweep",
reason: "Specialist in GaN-on-GaN epitaxial wafers and devices, holder of PSJ-GaN (Polarization Super Junction GaN) patents. Acquired by Sanken Electric in March 2025." },
{ division: "WBG Device Manufacturer", name: "STARPOWER Semiconductor", location: "Jiaxing, Zhejiang, China", url: "https://www.powersemi.com", source: "sweep",
reason: "IGBT/SiC module manufacturer, ranked #5 globally in IGBT modules (2022, #1 among Chinese firms), Shanghai-listed (603290), with R&D/HQ presence in Switzerland and Germany." },
{ division: "Device Testing", name: "Applied Technical Services (ATS)", location: "USA", source: "peter",
reason: "Peter's Phase 1 list. Reliability and radiation testing for aerospace semiconductors." },
{ division: "Device Testing", name: "AAA Engineering & Test Lab", location: "USA", source: "peter",
{ division: "Device Testing", name: "Applied Technical Services (ATS)", location: "USA", url: "https://atslab.com", source: "peter",
reason: "Peter's Phase 1 list. Reliability and radiation testing for aerospace semiconductors. Now operates under SGS (see SGS SA entry below) but continues under its own brand." },
{ division: "Device Testing", name: "AAA Engineering & Test Lab", location: "USA", url: "https://aaactl.com", source: "peter",
reason: "Peter's Phase 1 list. Hi-Rel/space qualification, RadHard testing." },
{ division: "Device Testing", name: "Radiation Test Solutions (RTS)", location: "Colorado Springs, Colorado, USA", url: "https://radiationtestsolutions.com", source: "both",
reason: "Peter's Phase 1 list + this sweep (moved here from Radiation Hardness to match Peter's placement). Independent flash-X-ray/heavy-ion/TID radiation-hardness qualification lab (MIL-STD-750/883), spun out of Cobham's radiation-test business in 2020." },
{ division: "Device Testing", name: "BEAMIDE", location: "EU", source: "peter",
{ division: "Device Testing", name: "BEAMIDE", location: "EU", url: "https://www.beamide.com", source: "peter",
reason: "Peter's Phase 1 list. Irradiation testing per ECSS/ESA standards." },
{ division: "Device Testing", name: "Reltech Limited", location: "Cambridgeshire, UK", url: "https://reltech.co.uk", source: "sweep",
reason: "Independent lab (est. 1976) providing semiconductor qualification/reliability testing (HTOL, HAST, LTOL, THB) to fabless/IDM customers; explicitly positions itself as independent." },
@@ -1200,11 +1200,11 @@ var PROSPECT_RESULTS = [
{ division: "Device Testing", name: "Element Materials Technology (formerly NTS)", location: "London, UK (global sites)", url: "https://www.element.com", source: "sweep",
reason: "Broad qualification/certification testing services including a defense/space division (Element U.S. Space and Defense); a general provider rather than SiC/GaN-specific, useful as a large umbrella contact." },
{ division: "Radiation Hardness", name: "RADNEXT (CERN-coordinated)", location: "EU", source: "peter",
{ division: "Radiation Hardness", name: "RADNEXT (CERN-coordinated)", location: "EU", url: "https://radnext.web.cern.ch", source: "peter",
reason: "Peter's Phase 1 list. European irradiation facility network." },
{ division: "Radiation Hardness", name: "ESA ESTEC / TEC-QEC", location: "Netherlands", source: "peter",
reason: "Peter's Phase 1 list. Radiation hardness assurance for space." },
{ division: "Radiation Hardness", name: "Paul Scherrer Institute (PSI)", location: "Switzerland", source: "peter",
{ division: "Radiation Hardness", name: "ESA ESTEC / TEC-QEC", location: "Netherlands", url: "https://www.esa.int/Enabling_Support/Space_Engineering_Technology/Radiation_a_testing_challenge", source: "peter",
reason: "Peter's Phase 1 list. Radiation hardness assurance for space. No dedicated public TEC-QEC page found — linked to ESA's general radiation-testing overview instead; ESCIES (escies.org) is the closest detailed public resource." },
{ division: "Radiation Hardness", name: "Paul Scherrer Institute (PSI)", location: "Switzerland", url: "https://www.psi.ch/en", source: "peter",
reason: "Peter's Phase 1 list. Proton irradiation facility." },
{ division: "Radiation Hardness", name: "BAE Systems — Space Systems", location: "Manassas, Virginia, USA (global HQ Farnborough, UK)", url: "https://baesystems.com", source: "sweep",
reason: "Produces the RAD5545/RAD750 radiation-hardened space processor line at a DoD Category 1A Trusted Source facility; long NASA/DoD track record." },
@@ -1212,7 +1212,7 @@ var PROSPECT_RESULTS = [
reason: "Produces radiation-hardened data converters, microprocessors, and custom ASICs for space/avionics." },
{ division: "Radiation Hardness", name: "VORAGO Technologies", location: "Austin, Texas, USA", url: "https://voragotech.com", source: "sweep",
reason: "Rad-hard MCUs/components for space and nuclear environments via a proprietary HARDSIL process; specifics mostly sourced from company material, limited independent confirmation." },
{ division: "Radiation Hardness", name: "Heavy Ion Facility, Université catholique de Louvain (UCLouvain)", location: "Louvain-la-Neuve, Belgium", source: "sweep",
{ division: "Radiation Hardness", name: "Heavy Ion Facility, Université catholique de Louvain (UCLouvain)", location: "Louvain-la-Neuve, Belgium", url: "https://www.uclouvain.be/en/research-institutes/irmp/heavy-ion-facility-hif", source: "sweep",
reason: "ESA-preferred external single-event-effects test facility (CYCLONE cyclotron); a potential collaborator/co-location partner rather than a paying customer." },
{ division: "Radiation Hardness", name: "TTM Technologies", location: "Costa Mesa, California, USA", url: "https://www.ttm.com", source: "sweep",
reason: "Supplier of rad-hard microcircuits to aerospace/space/defense, certified to MIL-PRF-38534 Class H and Class K (space-grade)." },
@@ -1225,25 +1225,25 @@ var PROSPECT_RESULTS = [
{ division: "Radiation Hardness", name: "Microchip Technology (rad-hard/rad-tolerant line)", location: "Chandler, Arizona, USA", url: "https://www.microchip.com", source: "sweep",
reason: "Same company as the Power Electronics (Devices) entry above, listed here separately for its distinct aerospace rad-hard/rad-tolerant product line — states it offers one of the widest selections of rad-hard/rad-tolerant parts for space." },
{ division: "Research & Collaborations", name: "Stony Brook University — Laboratory for Synchrotron X-ray Topography", location: "Stony Brook, New York, USA", source: "sweep",
{ division: "Research & Collaborations", name: "Stony Brook University — Laboratory for Synchrotron X-ray Topography", location: "Stony Brook, New York, USA", url: "https://you.stonybrook.edu/xraycharacterization/", source: "sweep",
reason: "PI Michael Dudley publishes synchrotron X-ray topography of GaN and 4H-SiC power-device material (ARPA-E sponsored) — the single most directly on-topic match found in this sweep." },
{ division: "Research & Collaborations", name: "ETH Zurich — Advanced Power Semiconductor Laboratory", location: "Zurich, Switzerland", source: "sweep",
{ division: "Research & Collaborations", name: "ETH Zurich — Advanced Power Semiconductor Laboratory", location: "Zurich, Switzerland", url: "https://aps.ee.ethz.ch/", source: "sweep",
reason: "Prof. Ulrike Grossner's group published 2025 work on defect formation in heavy-ion-degraded SiC power MOSFETs — a natural bridge between the WBG-device and rad-hardness divisions." },
{ division: "Research & Collaborations", name: "Vanderbilt University — Institute for Space and Defense Electronics", location: "Nashville, Tennessee, USA", source: "sweep",
{ division: "Research & Collaborations", name: "Vanderbilt University — Institute for Space and Defense Electronics", location: "Nashville, Tennessee, USA", url: "https://www.vanderbilt.edu/isde/", source: "sweep",
reason: "Schrimpf/Fleetwood group has a long DTRA/ONR-funded track record studying radiation effects in GaN/SiC materials and devices — a strong potential co-authorship partner." },
{ division: "Research & Collaborations", name: "University of Warwick — PEATER group", location: "Coventry, UK", source: "sweep",
{ division: "Research & Collaborations", name: "University of Warwick — PEATER group", location: "Coventry, UK", url: "https://warwick.ac.uk/fac/sci/eng/research/grouplist/electricalpower/peater/", source: "sweep",
reason: "Prof. Philip Mawby's 20+ year, ~25-researcher group is a major UK academic center for SiC power device/materials research that could want defect/epitaxy X-ray characterization support." },
{ division: "Research & Collaborations", name: "NASA Goddard Space Flight Center — NEPP Program", location: "Greenbelt, Maryland, USA", source: "sweep",
{ division: "Research & Collaborations", name: "NASA Goddard Space Flight Center — NEPP Program", location: "Greenbelt, Maryland, USA", url: "https://nepp.nasa.gov/", source: "sweep",
reason: "Runs heavy-ion/TID radiation qualification studies on SiC/GaN power devices for spaceflight. A government research program, not a company — engagement would follow a different channel than a commercial prospect." },
{ division: "Research & Collaborations", name: "Nagoya University — Center for Integrated Research of Future Electronics", location: "Nagoya, Japan", source: "sweep",
{ division: "Research & Collaborations", name: "Nagoya University — Center for Integrated Research of Future Electronics", location: "Nagoya, Japan", url: "https://imass.nagoya-u.ac.jp/en/organization/cirfe/", source: "sweep",
reason: "Active in X-ray topography defect analysis of GaN substrates, appearing in recent (2026) published work on SiC/GaN crystal defect characterization — a plausible co-authorship/joint-beamtime partner for the APAC region." },
{ division: "Research & Collaborations", name: "Linköping University — C3NiT-Janzén Center", location: "Linköping, Sweden", source: "sweep",
{ division: "Research & Collaborations", name: "Linköping University — C3NiT-Janzén Center", location: "Linköping, Sweden", url: "https://c3nit.se/", source: "sweep",
reason: "VINNOVA-funded Center for III-Nitride Technology (Erik Janzén group), deep publication record on GaN/SiC materials defects and epitaxy, with direct industry ties to SweGaN (already listed under Semiconductor Materials & Substrates) and to Ericsson/Saab." },
{ division: "Research & Collaborations", name: "Chalmers University of Technology", location: "Gothenburg, Sweden", source: "sweep",
{ division: "Research & Collaborations", name: "Chalmers University of Technology", location: "Gothenburg, Sweden", url: "https://www.chalmers.se/en/", source: "sweep",
reason: "Distinct from Linköping — collaborates with SweGaN, Ericsson and Saab on GaN power-amplifier work, most recently a 2025 6G GaN project." },
{ division: "Research & Collaborations", name: "Fraunhofer IISB", location: "Erlangen, Germany", source: "sweep",
{ division: "Research & Collaborations", name: "Fraunhofer IISB", location: "Erlangen, Germany", url: "https://www.iisb.fraunhofer.de/", source: "sweep",
reason: "Research institute performing full-wafer-scale X-ray topography defect mapping of SiC substrates/epilayers up to 200mm, plus device fabrication/characterization on a qualified 150mm SiC line — a very concrete fit, and geographically close to DESY." },
{ division: "Research & Collaborations", name: "ESRF — Rocking-Curve Imaging group", location: "Grenoble, France", source: "sweep",
{ division: "Research & Collaborations", name: "ESRF — Rocking-Curve Imaging group", location: "Grenoble, France", url: "https://www.esrf.fr/home/Industry/industry-news/content-news/esrf-news-list/semiconductor-defect-imaging.html", source: "sweep",
reason: "A peer synchrotron facility (not a customer) that developed rocking-curve imaging specifically for SiC/GaN defect imaging and has published industry-facing material on it — useful as a model/comparator or potential collaborator contact." }
];
var PROSPECT_METHODOLOGY_INTRO = "Methodology / Verification Note — two rounds, 2026-08-22:";